Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380

Showing results 166 to 214 of 214

166
Quasi-breakdown of ultra thin gate oxide under high field stress

Cho, Byung Jin; Lee, SH; Kim, JC; Choi, SH, IEEE International Electron Devices Meeting (IEDM), pp.605 - 605, 1994-12-11

167
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05

168
Rare earth oxide (Gd2O3) s a blocking layer in SONOS-type nonvolatile memory devices for high speed operation

조병진; Pu, J; Kim, SJ; Kim, YS, 한국반도체 학술대회, pp.615 - 616, 2008

169
Realization of a Wearable Thermoelectric Power Generator by Screen-Printing Technique for Human Body Applications

We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, 2nd ENGE 2012 (Int'l Conference on Electrical Materials and Nanotechnology for Green Environment), The korean Institute of Metals and Materials, 2012-09-19

170
Recent progress and technical issues of the application of graphene to electronic devices

Cho, Byung Jin, SEMI Technology Symposium 2013, SEMI Korea, 2013-01

171
Recent progress of graphene based FET device technology

조병진, 한국공업화학회 2012 추계학술대회, 한국공업화학회, 2012-11

172
Recent progress on application of graphene to MOS devices

조병진, Nano Korea 2012 (The 10th Int'l Nanotech Symposium & Nano-Convergence Expo in Korea, Ministry of Knowledge Economy, 2012-08

173
Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack

Cho, Byung Jin; Joo, MS; Balasubramanian, N; Kwong, DL, International Conference on Materials for Advanced Technologies, pp.40 - 40, 2005-07-03

174
Roles of primary hothole and FN electron fluences in gate oxide breakdown

Cho, Byung Jin; Li, MF; He, YD; Ma, SG; Lo, KF; Xu, MZ, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, pp.0 - 0, 1999-11-29

175
Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics

Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC; Gu, HL, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09

176
Seeding ALD of high-k gate dielectric in CVD graphene FETs for enhanced device performance and reliability

Shin, Woo Cheol; Cho, Byung Jin, Graphene Week 2012, 2012-06

177
Sidewall-sealed double LOCOS isolation structure with defect-free isolation recess

Cho, Byung Jin; Kim, YB; Jang, SA; Kim, JC, 43rd Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp.730 - 730, 1996-03-28

178
Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Hu, H, MRS Symposium, pp.19 - 19, 2003-04-21

179
Simultaneous measurements of Seebeck coefficient and thermal conductivity across thermoelectric film

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 32nd International Conference on Thermoelectrics, Thermoelectrics Society, 2013-07-01

180
SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

He, W.; Chan, D.S.H.; Cho, Byung Jin, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, pp.835 - 838, 2008-10-20

181
Stability Enhancement of Graphene Field Effect Transistors By Employing Ultrathin Amorphous Fluoropolymer Interface Layer

Shin, Woo Cheol; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

182
Strain Analysis of a Single-crystalline Silicon Membrane using FEM Simulation

Kim, Choelgyu; Bong, JH; Hwang, WS; Cho, Byung Jin; Kim, Taek Soo, MPC 2016 Autumn Symposium, MPC, 2016-09-23

183
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03

184
Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application

Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11

185
Study on nonvolatile byproducts generated during etching of advanced gate stacks

Cho, Byung Jin; Hwang, WS; Chan, DSH; Yoo, WJ, 28th International Symposium on Dry Process, pp.0 - 0, 2006-11-29

186
Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

Cho, Byung Jin; Park, CS; Tang, LJ; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2004-12-13

187
Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET

Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Zhu, HC; Liew, YF, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

188
Surface passivation using silane for epitaxial growth of graphene on SiC substrate

Kang, B.-J.; Lim, S.-K.; Cho, Byung Jin, 1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society, v.19, pp.125 - 130, 2009-05-25

189
Surface Pre-Treatment for Epitaxial Growth of Graphene on SiC Substrate

조병진; Seo, JH; Kang, BJ, 16th Korean Conference on Semiconductors, 2009-02-20

190
Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Liew, YF; Kwong, DL, IEEE-Nanotech 2007, pp.0 - 0, 2007-08-02

191
Synthesis of large-scale graphene layers on metal thin films and application to electronic devices

Cho, Byung Jin; Mun, Jeong Hun; Song, Seung Min; Noh, Young Dal; Kang, Byung Jin, International Conference on Electronic Materials 2010, International Union of Materials Research Societies, 2010-08

192
Synthesis of wafer scale graphene layer for future electronic devices

Cho, Byung Jin, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, pp.65 - 67, IEICE, 2010-07-01

193
Technical challenges in Front-End Processes for next generation CMOS devices

Cho, Byung Jin, AMSEA ET (Applied Materials South East Asia Engineering & Technology) Conference 2005, pp.0 - 0, 2005-08-07

194
Technical Issues and Recent Progress on Graphene-based RF MOSFET

Cho, Byung Jin, IEEE Topical Symposium on RF Nanotechnology, IEEE, 2012-05

195
The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate

Cho, Byung Jin; Loh, WY; Majhi, P; Lee, SH; Oh, JW; Sassman, B; Young, C; et al, 2008 Symposium on VLSI Technology, pp.56 - 57, 2008-06-17

196
The effect of Interfacial Layer of High-K Dielectrics on GaAs Substrate

Cho, Byung Jin; Tong, Y; Dalapati, GK; Oh, HJ, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

197
The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process

Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp.32 - 32, 1998-08-29

198
The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

Loh, W.-Y.; Majhi, P.; Lee, S.-H.; Oh, J.-W.; Sassman, B.; Young, C.; Bersuker, G.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.56 - 57, 2008-06-17

199
Thermoelectric Properties of p-type Sb2Te3 and n-type Bi2Te3 Thick Films Deposited by Screen-Printing Technique

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, 2nd ENGE 2012 (Int'l Conference on Electrical Materials and Nanotechnology for Green Environment), The korean Institute of Metals and Materials, 2012-09-19

200
Thin Film Thermoelectric Module using Screen Print Method

Cho, Byung Jin; Choi, Kyung Cheol, 29th International Conference on Thermoelectrics, 29th International Conference on Thermoelectrics, 2010-05-31

201
Three Dimensional Integration of Graphene and Silicon CMOS Hybrid Circuits

Hong, Seul Ki; Oh, Joong Gun; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

202
Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer

Cho, Byung Jin; Park, CS; Tang, LJ; Wang, W; Kwong, DL, Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2004-09-14

203
Tunable Dirac Voltage of Graphene Field Effect Transistors With Hafnium Lanthanum Oxide Gate Dielectric

Oh, Joong Gun; Shin, Yun Sang; Shin, Woo Cheol; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

204
Very light nitridation of thin gate oxide in low pressure N2O

Cho, Byung Jin; Joo, MS; Lee, SH; Kim, JC; Choi, SH, 3rd Symp. on Silicon Nitride and Silicon Dioxide Thin Insulation Films, pp.458 - 458, 1994-05-08

205
Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics

Cho, Byung Jin; Huang, CH; Yang, MY; Chin, A; Chen, WJ; Zhu, CX; Li, MF, Symposium on VLSI Technology, pp.119 - 119, 2003-06-11

206
Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction

Cho, Byung Jin; Zhu, C; Hu, H; Yang, XF; Kim, SJ; Chin, A, International Electron Device Meeting (IEDM), pp.0 - 0, IEEE International Electron Devices, 2003-12-08

207
Wafer temperature simulation and control algorithm in RTA system

조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.0 - 0, 1987-05-12

208
Work function shifts of monolayer and few layers of graphene under metal electrodes

Song, Seung Min; Bong, Jae Hoon; Cho, Byung Jin, Graphene 2014, Graphene 2014, 2014-05-06

209
ZT Enhancement in Screen-Printed Bi2Te2.7Se0.3 Thick Film via Post Annealing Process

Kim, Sun Jin; Kim, Yongjun; Choi, Hyeongdo; We, Ju Hyung; Shin, Ji Seon; Cho, Byung Jin, The 35th International Conference & The 1st Asian Conference on Thermoelectrics (ICT/ACT 2016), Wuhan University of Technology, 2016-06-01

210
그래핀 기반의 유연저항 메모리 소자의 제작과 동작원리에 관한 연구

홍슬기; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

211
그래핀/게이트 절연막의 계면 제어를 통한 그래핀 전계 효과 트랜지스터의 전기적 성능 및 안정성 향상

신우철; 김택용; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

212
금속/그래핀/산화막/반도체 구조에서 그래핀이 커패시턴스에 미치는 영향

송승민; 박종경; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

213
기판 전사과정에서의 CVD graphene의 화학적 결합 변화와 mobility 변화에 대한 연구

홍슬기; 송승민; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

214
높은 on/off 전류비를 갖는 그래핀 전계 효과 소자

문정훈; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05

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