Rare earth oxide (Gd2O3) s a blocking layer in SONOS-type nonvolatile memory devices for high speed operation
- Issue Date
- 2008
- Language
- KOR
- Citation
한국반도체 학술대회, pp.615 - 616
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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