DSpace at KOASAS: Quasi-breakdown of ultra thin gate oxide under high field stress

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Quasi-breakdown of ultra thin gate oxide under high field stressQuasi-breakdown of ultra thin gate oxide under high field stress

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Cho, Byung Jin researcher / Lee, SH / Kim, JC / Choi, SH

Issue Date: 1994-12-11

Language: ENG

Citation: IEEE International Electron Devices Meeting (IEDM), pp.605 - 605

URI: http://hdl.handle.net/10203/108359

Appears in Collection: EE-Conference Papers(학술회의논문)

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