Quasi-breakdown of ultra thin gate oxide under high field stressQuasi-breakdown of ultra thin gate oxide under high field stress
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | Lee, SH | - |
| dc.contributor.author | Kim, JC | - |
| dc.contributor.author | Choi, SH | - |
| dc.date.accessioned | 2013-03-14T11:48:21Z | - |
| dc.date.available | 2013-03-14T11:48:21Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-12-11 | - |
| dc.identifier.citation | IEEE International Electron Devices Meeting (IEDM), v., no., pp.605 - 605 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108359 | - |
| dc.language | ENG | - |
| dc.title | Quasi-breakdown of ultra thin gate oxide under high field stress | - |
| dc.title.alternative | Quasi-breakdown of ultra thin gate oxide under high field stress | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 605 | - |
| dc.citation.endingpage | 605 | - |
| dc.citation.publicationname | IEEE International Electron Devices Meeting (IEDM) | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Lee, SH | - |
| dc.contributor.nonIdAuthor | Kim, JC | - |
| dc.contributor.nonIdAuthor | Choi, SH | - |
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