Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor applicationStudy of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application

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Issue Date
2003-12-11
Language
ENG
Citation

International Conference on Materials for Advanced Technologies, pp.532 - 532

URI
http://hdl.handle.net/10203/144761
Appears in Collection
EE-Conference Papers(학술회의논문)
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