Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictionsRadiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions
- Issue Date
- 1999-07-05
- Language
- ENG
- Citation
Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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