The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

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Issue Date
2008-06-17
Language
ENG
Citation

2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.56 - 57

ISSN
0743-1562
URI
http://hdl.handle.net/10203/155953
Appears in Collection
EE-Conference Papers(학술회의논문)
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