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The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate

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dc.contributor.authorLoh, W.-Y.-
dc.contributor.authorMajhi, P.-
dc.contributor.authorLee, S.-H.-
dc.contributor.authorOh, J.-W.-
dc.contributor.authorSassman, B.-
dc.contributor.authorYoung, C.-
dc.contributor.authorBersuker, G.-
dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPark, C.-S.-
dc.contributor.authorKang, C.-Y.-
dc.contributor.authorKirsch, P.-
dc.contributor.authorLee, B.-H.-
dc.contributor.authorHarris, H.R.-
dc.contributor.authorTseng, H.-H.-
dc.contributor.authorJammy, R.-
dc.date.accessioned2013-03-19T05:00:54Z-
dc.date.available2013-03-19T05:00:54Z-
dc.date.created2012-02-06-
dc.date.issued2008-06-17-
dc.identifier.citation2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, v., no., pp.56 - 57-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10203/155953-
dc.languageENG-
dc.titleThe effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Sil-xGex/Si p-MOSFETs with high-K/metal gate-
dc.typeConference-
dc.identifier.scopusid2-s2.0-51949102511-
dc.type.rimsCONF-
dc.citation.beginningpage56-
dc.citation.endingpage57-
dc.citation.publicationname2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLoh, W.-Y.-
dc.contributor.nonIdAuthorMajhi, P.-
dc.contributor.nonIdAuthorLee, S.-H.-
dc.contributor.nonIdAuthorOh, J.-W.-
dc.contributor.nonIdAuthorSassman, B.-
dc.contributor.nonIdAuthorYoung, C.-
dc.contributor.nonIdAuthorBersuker, G.-
dc.contributor.nonIdAuthorPark, C.-S.-
dc.contributor.nonIdAuthorKang, C.-Y.-
dc.contributor.nonIdAuthorKirsch, P.-
dc.contributor.nonIdAuthorLee, B.-H.-
dc.contributor.nonIdAuthorHarris, H.R.-
dc.contributor.nonIdAuthorTseng, H.-H.-
dc.contributor.nonIdAuthorJammy, R.-
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EE-Conference Papers(학술회의논문)
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