Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stabilityStudy of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability
- Issue Date
- 2005-07-03
- Language
- ENG
- Citation
International Conference on Materials for Advanced Technologies, pp.13 - 13
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.