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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stabilityStudy of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorYeo, CC-
dc.contributor.authorYeo, H-
dc.contributor.authorGao, F-
dc.contributor.authorLee, SJ-
dc.contributor.authorYu, CY-
dc.contributor.authorLiu, CW-
dc.date.accessioned2013-03-18T03:08:52Z-
dc.date.available2013-03-18T03:08:52Z-
dc.date.created2012-02-06-
dc.date.issued2005-07-03-
dc.identifier.citationInternational Conference on Materials for Advanced Technologies, v., no., pp.13 - 13-
dc.identifier.urihttp://hdl.handle.net/10203/144190-
dc.languageENG-
dc.titleStudy of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability-
dc.title.alternativeStudy of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage13-
dc.citation.endingpage13-
dc.citation.publicationnameInternational Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorYeo, CC-
dc.contributor.nonIdAuthorYeo, H-
dc.contributor.nonIdAuthorGao, F-
dc.contributor.nonIdAuthorLee, SJ-
dc.contributor.nonIdAuthorYu, CY-
dc.contributor.nonIdAuthorLiu, CW-
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EE-Conference Papers(학술회의논문)
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