Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380

Showing results 129 to 188 of 214

129
Low Cost and Flexible Non-Volatile Memory Using Oxidized Graphene and Analysis of Its Switching Mechanism

Hong, Seul Ki; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

130
LOW-COST THERMOELECTRIC POWER GENERATOR USING SCREEN PRINTING TECHNIQUE

Cho, Byung Jin; We, Ju Hyung; Kim, Sun Jin, 4th Molecular Materials Meeting (M3), Institute of Materials Research and Engineering, 2014-01-16

131
Material and electrical characterization of HfO2 films for MIM capacitors applications

Cho, Byung Jin; Hu, H; Zhu, C; Lu, YF; Zeng, JN; Wu, YH; Liew, YF, MRS Spring meeting, pp.0 - 0, 2003-04-22

132
Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

Huang, J.; Kirsch, P.D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.82 - 83, 2008-06-17

133
Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process

Cho, Byung Jin; Hwang, WS; Chan, DSH, IEEE 4th International Symposium on Advanced Gate Stack Technology, pp.0 - 0, 2007-09-10

134
Metal Electrode (Panel Presentation)

Cho, Byung Jin, Proceedings on 2nd International Symposium on Advanced Gate Stack Technology, pp.15 - 19, 2005-09-05

135
Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08

136
Metal-Germanium contacts with Graphene Interfacial Layer

서유진; 오중건; 김택용; 조병진; Lee, Seok-Hee, International Conference on Electronic Materials and Nanotechnlogy for Green Engvironment, Korean Institute of Metals and Materials, 2012-09-18

137
MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications

Cho, Byung Jin; Yu, X; Zhu, C; Hu, H; Chin, A; Li, MF; Kwong, DL, MRS Spring meeting, pp.0 - 0, 2003-04-21

138
MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

Cho, Byung Jin; Joo, MS; Yeo, CC; Whoang, SJ; Matthew, S; Bera, LK; Balasubramanian, N, 2003 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2003-09-19

139
Modeling of Thermal Conductivity Extraction of Thin Film Thermoelectric Materials Using a Screen Printing Technique

We, Ju Hyung; Kim, Sun Jin; Cho, Byung Jin, 6th Annual Energy Harvesting Workshop, 2011-08

140
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization

Cho, Byung Jin; Poon, D; Tan, LS; Bhat, M; See, A, IEEE 4th International Workshop on Junction Technology (IWJT-2004), pp.22 - 26, 2004-03-15

141
N-doped graphene aerogel loudspeaker

Kim, Choong Sun; Lee, Kyung Eun; Kim, Sang Ouk; Choi, Jung Woo; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

142
New breakdown mechanism of ultra thin gate oxides under ballistic transport

Cho, Byung Jin; Lee, SH; Joo, MS; Park, YJ; Kim, JC, 1st Korean Semiconductor Tech. Symp., pp.0 - 0, 1994-02-15

143
New reliability issues of CMOS transistors with 1.3 nm gate oxide

Cho, Byung Jin; Li, MF; Chen, G; Loh, WY; Kwong, DL, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, pp.0 - 0, 2003-04-28

144
New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz

Cho, Byung Jin; Chin, A; Mei, P; Zhu, C; Li, MF; Lee, S; Yoo, WJ, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, pp.0 - 0, 2003-11-13

145
Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application

Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03

146
Non-volatile Flexible ReRAM based on graphene oxide

조병진, IEEK Summer Conference 2010, IEEK Summer Conference 2010, 2010-06-16

147
Non-Volatile Memory Using Graphene Oxide for Flexible Electronics

Cho, Byung Jin, 10th International Conference on Nanotechnology (IEEE NANO 2010), IEEE, 2010-08-18

148
Novel oxynitridation technology for highly reliable thin dielectrics

Cho, Byung Jin; Joo, MS; Lee, SH; Lee, SK; KIm, JC; Choi, SH, Symp. on VLSI Tech., pp.107 - 107, 1995-06-07

149
Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application

Cho, Byung Jin; Zhang, G; Hwang, WS; Bobade, SM; Lee, SH; Yoo, WJ, International Electron Device Meeting (IEDM) 2007, pp.0 - 0, 2007-12-01

150
Optimization of Annealing Process of Screen Printed Sb2Te3 and Bi2Te3 Thick Films for Power Generator

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, ICT/ECT2012, Int'l Thermoelectrics Society, 2012-07-09

151
Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors

Shin, W.C.; Moon, H.; Yoo, S.; Cho, Byung Jin, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.936 - 939, IEEE, 2010-08-17

152
p+ n shallow junction formation from BN source using RTP

조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.77 - 77, 1987-05-12

153
Pentacene Thin-Film Transistors with PVP/HfLaO Hybrid Gate Dielectric for Low Voltage Operation

Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-08

154
Photoluminescene from silicon nanocrystals formed by pulsed laser deposition

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Song, WD; Hu, H, MRS Symposium, pp.13 - 13, 2003-04-22

155
Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

Cho, Byung Jin; Joo, MS; Yeo, CC; Ching, YL; Loh, WY; Whoang, SJ; Mathew, S, International Conference on Materials for Advanced Technologies, pp.517 - 517, 2003-12-11

156
Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Cho, Byung Jin; Guan, H; Li, MF; Zhang, Y; Jie, BB; Xie, J; Wang, JLF, 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp.20 - 20, 1999-10-15

157
Process and Structural Optimization of a Planar-Type Thermoelectric Power Generator by Screen-Printing Technique

We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, The 31st International & 10th European Conference on Thermoelectrics, Int'l Thermoelectrics Society, 2012-07-09

158
Process Control and Uniformity Improvement in Synthesis of Large-scale Graphene Layers on Metal Thin Films.

Cho, Byung Jin, 2010 Material Research Society Spring Meeting, 2010 Material Research Society Spring Meeting, 2010-04-09

159
Process optimization for multiple-pulse laser annealing of boron implanted silicon with germanium pre-amorphization

Cho, Byung Jin; Poon, D; Lu, YF; Bhat, M; See, A, MRS Spring Meeting, pp.0 - 0, 2003-04-22

160
Process Optimization of Screen-printed Thermoelectric Thick-films for Flexible Thermoelectric Devices

Choi, Hyeongdo; Kim, Sun Jin; Kim, Yongjun; We, Ju Hyung; Shin, Ji Seon; Yi, Kevin K; Cho, Byung-Jin, The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment, The Korean Institute of Metals and Materials, 2016-11-07

161
Progressive breakdown statistics in ultra-thin silicon dioxides

Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08

162
Properties of graphene on different dielectrics and graphene oxide based flexible resistive memory

Cho, Byung Jin, Recent Advances in Graphene and Related Materials 2010, Engineering Conferences International, Recent Advances in Graphene and Related Materials 2010, 2010-08-04

163
Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface

Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11

164
PVP/GO:Graphene/Polymer composite film as a Cu diffusion barrier

김재환; 윤성준; 봉재훈; 윤알렉산더; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-14

165
PVP/GO:Graphene/polymer composite film as a Cu diffusion barrier

Kim, Jae Hwan; Yoon, Seong Jun; Bong, Jae Hoon; Yoon, Alexander; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-27

166
Quasi-breakdown of ultra thin gate oxide under high field stress

Cho, Byung Jin; Lee, SH; Kim, JC; Choi, SH, IEEE International Electron Devices Meeting (IEDM), pp.605 - 605, 1994-12-11

167
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05

168
Rare earth oxide (Gd2O3) s a blocking layer in SONOS-type nonvolatile memory devices for high speed operation

조병진; Pu, J; Kim, SJ; Kim, YS, 한국반도체 학술대회, pp.615 - 616, 2008

169
Realization of a Wearable Thermoelectric Power Generator by Screen-Printing Technique for Human Body Applications

We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, 2nd ENGE 2012 (Int'l Conference on Electrical Materials and Nanotechnology for Green Environment), The korean Institute of Metals and Materials, 2012-09-19

170
Recent progress and technical issues of the application of graphene to electronic devices

Cho, Byung Jin, SEMI Technology Symposium 2013, SEMI Korea, 2013-01

171
Recent progress of graphene based FET device technology

조병진, 한국공업화학회 2012 추계학술대회, 한국공업화학회, 2012-11

172
Recent progress on application of graphene to MOS devices

조병진, Nano Korea 2012 (The 10th Int'l Nanotech Symposium & Nano-Convergence Expo in Korea, Ministry of Knowledge Economy, 2012-08

173
Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack

Cho, Byung Jin; Joo, MS; Balasubramanian, N; Kwong, DL, International Conference on Materials for Advanced Technologies, pp.40 - 40, 2005-07-03

174
Roles of primary hothole and FN electron fluences in gate oxide breakdown

Cho, Byung Jin; Li, MF; He, YD; Ma, SG; Lo, KF; Xu, MZ, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, pp.0 - 0, 1999-11-29

175
Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics

Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC; Gu, HL, 2007 MRS Spring Meeting, pp.0 - 0, 2007-04-09

176
Seeding ALD of high-k gate dielectric in CVD graphene FETs for enhanced device performance and reliability

Shin, Woo Cheol; Cho, Byung Jin, Graphene Week 2012, 2012-06

177
Sidewall-sealed double LOCOS isolation structure with defect-free isolation recess

Cho, Byung Jin; Kim, YB; Jang, SA; Kim, JC, 43rd Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp.730 - 730, 1996-03-28

178
Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas

Cho, Byung Jin; Chen, XY; Lu, YF; Wu, YH; Hu, H, MRS Symposium, pp.19 - 19, 2003-04-21

179
Simultaneous measurements of Seebeck coefficient and thermal conductivity across thermoelectric film

Kim, Sun Jin; We, Ju Hyung; Kim, Gyung Soo; Cho, Byung Jin, The 32nd International Conference on Thermoelectrics, Thermoelectrics Society, 2013-07-01

180
SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

He, W.; Chan, D.S.H.; Cho, Byung Jin, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, pp.835 - 838, 2008-10-20

181
Stability Enhancement of Graphene Field Effect Transistors By Employing Ultrathin Amorphous Fluoropolymer Interface Layer

Shin, Woo Cheol; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05

182
Strain Analysis of a Single-crystalline Silicon Membrane using FEM Simulation

Kim, Choelgyu; Bong, JH; Hwang, WS; Cho, Byung Jin; Kim, Taek Soo, MPC 2016 Autumn Symposium, MPC, 2016-09-23

183
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability

Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03

184
Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application

Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11

185
Study on nonvolatile byproducts generated during etching of advanced gate stacks

Cho, Byung Jin; Hwang, WS; Chan, DSH; Yoo, WJ, 28th International Symposium on Dry Process, pp.0 - 0, 2006-11-29

186
Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free

Cho, Byung Jin; Park, CS; Tang, LJ; Kwong, DL, International Electron Device Meeting (IEDM), pp.0 - 0, 2004-12-13

187
Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET

Cho, Byung Jin; Whang, SJ; Lee, SJ; Yang, WF; Zhu, HC; Liew, YF, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06

188
Surface passivation using silane for epitaxial growth of graphene on SiC substrate

Kang, B.-J.; Lim, S.-K.; Cho, Byung Jin, 1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society, v.19, pp.125 - 130, 2009-05-25

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