Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interfaceProperties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface

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Issue Date
2003-12-11
Language
ENG
Citation

2nd International Conference on Materials for Advanced Technologies, pp.513 - 513

URI
http://hdl.handle.net/10203/145112
Appears in Collection
EE-Conference Papers(학술회의논문)
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