DSpace at KOASAS: Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniquePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

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Cho, Byung Jin researcher / Guan, H / Li, MF / Zhang, Y / Jie, BB / Xie, J / Wang, JLF

Issue Date: 1999-10-15

Language: ENG

Citation: 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp.20 - 20

URI: http://hdl.handle.net/10203/130413

Appears in Collection: EE-Conference Papers(학술회의논문)

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Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniquePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

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