DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Guan, H | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | Zhang, Y | - |
dc.contributor.author | Jie, BB | - |
dc.contributor.author | Xie, J | - |
dc.contributor.author | Wang, JLF | - |
dc.date.accessioned | 2013-03-16T10:34:38Z | - |
dc.date.available | 2013-03-16T10:34:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-10-15 | - |
dc.identifier.citation | 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, v., no., pp.20 - 20 | - |
dc.identifier.uri | http://hdl.handle.net/10203/130413 | - |
dc.language | ENG | - |
dc.title | Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique | - |
dc.title.alternative | Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 20 | - |
dc.citation.endingpage | 20 | - |
dc.citation.publicationname | 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Guan, H | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Zhang, Y | - |
dc.contributor.nonIdAuthor | Jie, BB | - |
dc.contributor.nonIdAuthor | Xie, J | - |
dc.contributor.nonIdAuthor | Wang, JLF | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.