Browse "School of Electrical Engineering(전기및전자공학부)" by Author 1380
Showing results 45 to 104 of 214
| Effect of additional low temperature RTA on ultra-shallow p+-n junction formation Cho, Byung Jin; Lee, KH; Oh, JG; Kim, JC, 11th International Conf. on Ion Implantation Technology, pp.634 - 637, The Korea Society of Applied Physics, 1997-05-22 |
| Effect of electron-beam lithography on thin gate oxide reliability Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS, 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.55 - 55, 2001-07-09 |
| Effect of in-situ P doped polysilicon on gate oxide (I) - yield degradation Cho, Byung Jin; Lim, JU; Park, YJ; Kim, JC; Choi, SH, 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp.664 - 664, 1994-03-28 |
| Effect of in-situ P doped polysilicon on gate oxide (II) - Process condition dependence Cho, Byung Jin; Lim, JU; Park, YJ; Kim, JC; Choi, SH, 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp.664 - 664, 1994-03-28 |
| Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si Cho, Byung Jin; Park, BH; Yu, SH; Kim, JC, 1996 Spring Meeting of Materials Research Society of Korea, pp.0 - 0, 1996-05-17 |
| Effects of Cu diffusion on MOSFET electrical properties Cho, Byung Jin; Zhu, C; Yoo, WJ; Tan, DPP; Lim, SY, 18th International VLSI Multilevel Interconnection Conf. (VMIC), pp.0 - 0, 2001-11-28 |
| Effects of Low Energy Nitrogen Plasma on the Removal of HfSiON Cho, Byung Jin; Hwang, WS; Yoo, WJ; Chan, DSH, AVS 53rd International Symposium, pp.0 - 0, 2006-11-12 |
| Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide Cho, Byung Jin; Lek, CM; Loh, WY; Ang, CH; Lin, W; Tan, YL; Zhen, JZ; et al, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.0 - 0, 2002-07-08 |
| Electrical and Physical Properties of ALD HfLaO for CMOS Device Application Cho, Byung Jin; He, W; Kim, SJ; Kim, YS, Material Research Society 2008 Spring Meeting, 2008-03-26 |
| Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11 |
| Electrical evaluation of laser annealed junctions by Hall measurement Cho, Byung Jin; Poon, DCH; Tan, LS; Bhat, M; Chan, L, 2nd International Conference on Materials for Advanced Technologies, pp.578 - 578, 2003-12-11 |
| Electrical Properties of CMOS Devices with Cu Local Interconnects Cho, Byung Jin; Xie, H; Yoo, WJ; Zhu, C; Lim, SY; Tan, D; Lai, D, 8th International Conference on Dielectrics & Conductors for ULSI Multilevel Interconnection (DCMIC), pp.0 - 0, 2002-02-25 |
| Energy gap and band alignment of (HfO2)x(Al2O3)1-x on (100) Si by XPS Cho, Byung Jin; Yu, HY; Li, MF; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ, 2002 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2002-12-17 |
| Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs Cho, Byung Jin; Kim, SJ; Li, MF; Ding, SJ; Yu, MB; Zhu, C; Chin, A; et al, Symposium on VLSI Technology, pp.218 - 219, 2004-06-17 |
| Enhanced Thermoelectric Performance of PEDOT:PSS Films by Treatment with Self-assembled Monolayers We, Ju Hyung; Choi, Soo Young; Kim, Sun Jin; Kim, Jin Baek; Cho, Byung Jin, The International Conference on Organic and Hybrid Thermoelectrics, Tokyo University of Science, 2016-01-19 |
| Enhancement of Dielectric Constant of HfO2 by Lanthanum Incorporation and Crystallization 조병진; He, W; Chan, DSH, 16th Korean Conference on Semiconductors, 2009-02-20 |
| Enhancement of Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors Song, Seung Min; Oh, Joong Gun; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-26 |
| Enhancement of high temperature data retention by La2O3-doped nitride for charge-trap type flash memory device Park, JK; Park, Y; Lee, Seok-Hee; Lim, SK; Oh, JS; Joo, MS; Hong, K; et al, 제18회 한국반도체학술대회, 한국물리학회 반도체분과회, 한국재료학회, 대한전기학회 전기재료 연구회, 2011-02 |
| Evaluation of a vertical tube concept for RTP Cho, Byung Jin; Vandenabeele, P; Maex, K, Materials Research Society (MRS) Symp., pp.165 - 165, 1993-04-12 |
| Evaluation of SOHOS (polysilicon-oxide-high-K-oxide-silicon) structure for Flash memory device application Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Joo, MS; Ng, TH, International Conference on Materials for Advanced Technologies, pp.19 - 20, 2005-07-03 |
| Evaluation of Thermal Conductivity of Thin Film Thermoelectric Materials prepared by Screen Printing Technique We, Ju Hyung; Lee, Heon Bok; Kim, Sun Jin; Kim, Kuk Joo; Choi, Kyung Cheol; Cho, Byung Jin, 30th International Conference on Thermoelectrics, 2011-07 |
| Experimental results of a prototype rapid thermal annealing system 조병진; Kim, KT; Kim, CK, Conf. on CAD, Semiconductor Material and Components, pp.71 - 71, 1986-05-14 |
| Fabrication and characterization of 65nm gate length p-MOSFET integrated with bottom up grown Si nanowire Cho, Byung Jin; Yang, WF; Whang, SJ; Lee, SJ; Zhu, HC, 211th Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| Feasibility of Metal Carbides for Metal Gate CMOS Devices (Invited) Cho, Byung Jin; Hwang, WS, SEMI Technology Symposium, pp.233 - 238, 2008-01-10 |
| Field Effect Transistor With A Physical Gap Graphene Channel For Digital Logic Device With High On/Off Current Ratio Mun, Jeong Hun; Cho, Byung Jin, Nature conference - Graphene : The Road to Applications, Nature Publishing Group, 2011-05 |
| Field-Controlled Ion Doping of Graphene Kinder, Erich; Lu, Hao; Hwang, Wan Sik; Cho, Byung Jin; Hong, Seul Ki; Seabaugh, Alan; Fullerton-shirey, Susan, 225th ECS Meeting(Carbon Nanostructures and Devices), The electrochemical Society, 2014-05-12 |
| First Experimental Demonstration of Junctionless SiGe PMOS FinFETs on n-type Bulk-Si 김태균; 윤영광; 문정민; 문동일; 이기성; 이동욱; 황철해; et al, 제20회 한국반도체학술대회, 동부하이텍, 한국반도체산업협회, 한국반도체연구조합, 2013-02-05 |
| Flexibility improvement of screen-printed thermoelectric film by conductive polymer treatment We, Ju Hyung; Kim, Sun Jin; Kim, Gyung Soo; Cho, Byung Jin, The 32nd International Conference on Thermoelectrics, Thermoelectrics Society, 2013-07-03 |
| Flexible RRAM based on Graphene Oxide 홍슬기; 조병진, 18th Korean Conference on Semiconductors, 2011-02 |
| Flexible, Inexpensive, and Environmental-Friendly Thermoelectric Device Module Using a Screen Printing Technique Lee, Heon Bok; We, Ju Hyung; Yang, Hyun Jeong; Cho, Byung Jin, 1st International Conference on Electronic Materials and Nanotechnology for Green Environment, 2010-11 |
| Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET Cho, Byung Jin; Poon, D; Tan, LS; Du, AY; Chan, L, 3rd International Conference on Materials for Advanced Technologies, pp.5 - 5, 2005-07-03 |
| Formation of ultra-shallow junction by point defect engineering Cho, Byung Jin; Lee, KH; Sohn, YS; Oh, JG; Kim, JC, Ion Implantation Conf., pp.0 - 0, 1996-04-05 |
| Frequency controlled thermo-acoustic resonator using a vertically aligned CNT sheet Shin, Eui Joong; Kim, Choong Sun; Kim, Dong Hwan; Choi, Jung Woo; Cho, Byung Jin, The 8th International Conference on Recent Progress in Graphene/2D Research, SKKU Advanced Institute of Nano Technology, 2016-09-26 |
| Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs Cho, Byung Jin; Huang, CH; Yu, DS; Chin, A; Chen, WJ; Zhu, C; Li, MF, International Electron Device Meeting (IEDM), pp.0 - 0, 2003-12-08 |
| Functionalized graphene oxide for resistive switching memory device Hong, SK; Cho, Byung Jin, 2011 Materials Research Society (MRS) Spring Meeting, 2011-04 |
| GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy Cho, Byung Jin; Oh, HJ; Choi, KJ; Loh, WY; Htoo, T; Chua, SJ, Electrochemical Society Meeting, pp.0 - 0, 2007-05-06 |
| Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices Cho, Byung Jin; Pu, J; Kim, SJ; Kim, YS, Material Research Society 2008 Spring Meeting, 2008-03-25 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| Germanium MOS capacitors with ultra thin HfO2 gate dielectric Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
| Graphene based Resistive Mixer for Flexible RF Applications Oh, Joong Gun; Seong, Hyejeong; Kim, Choong Sun; Im, Sung Gap; Cho, Byung Jin, 7th International Conference on Recent Progress in Graphene & Two-Dimensional Materials Research, Monash Centre for Atomically Thin Materials, 2015-10-27 |
| Graphene Field Effect Transistors with Ultrathin Fluoropolymer/SiO2 Hybrid Gate Dielectric Shin, Woo Cheol; Cho, Byung Jin, The 9th International Nanotech Symposium & Exhibition with NANO KOREA 2011, 2011-08 |
| Graphene for Electronic Devices 조병진, 한국공업화학회, 2012-03 |
| Graphene for Future Electronic Devices Cho, Byung Jin, The 9th Korea-US NanoForum, 2012-06 |
| Graphene for MOS devices 조병진, 2012 한국재료학회 제 22 회 신소재 심포지엄, 2012-05 |
| Graphene for RF and 3D IC Applications 조병진; 홍슬기; 송승민, 13th RF Integrated Circuit Technology Workshop, 대한전자공학회 RF집적회로기술연구회, 2013-09-26 |
| Graphene Gate Electrode for Advanced Silicon-Based CMOS Devices Park, Jong Kyung; Song, Seung Min; Mun, Jeong Hun; Cho, Byung Jin, Graphene Week 2012, 2011-06 |
| Graphene oxide based flexible ReRAM and its switching mechanism 홍슬기; 조병진, The Polymer Society of Korea - Society's Spring Meeting, 2011-04 |
| Graphene oxide based flexible ReRAM and its switching mechanism Hong, SK; Choi, SY; Cho, Byung Jin, Dasan Conference - Graphene Science and Technology, pp.80 - 81, KOSFT, 2010-11 |
| Graphene Thermo-acoustic Resonator for Boosting Sound Pressure Level in Low Frequency Region 신의중; 김충선; 김동환; 최정우; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-14 |
| Graphene towards electronic device and systems 조병진; 홍슬기; 문정훈; 신우철, Nano Korea 2013, Graphene symposium 2013, 미래창조과학부, 2013-07-11 |
| Growth and characterization of hafnium oxide thin films prepared by MOCVD Cho, Byung Jin; Fong, CS; Wei, VLS; Krishnam, RG; Trigg, A; Bera, LK; Mathew, S, 2003 International conference on Characterisation and Metrology for ULSI technology, pp.176 - 180, 2003-03-24 |
| Growth of monolayer graphene with minimized wrinkles using rGO interfacial layer Mun, Jeong Hun; Bong, Jae Hoon; Oh, Joong Gun; Cho, Byung Jin, Carbon 2014, Korean Carbon Society, 2014-06-30 |
| Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies Cho, Byung Jin; Kim, SJ; Li, MF; Yu, MB, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
| HfLaO 절연막을 이용한 그래핀 전계효과 트랜지스터의 Dirac 전압 조율 오중건; 신윤상; 신우철; 조병진, 2011 Korean Carbon Society Spring Meeting, 한국탄소학회, 2011-05 |
| HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Kwong, DL, Symposium on VLSI Technology, pp.77 - 77, 2003-06-10 |
| High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14 |
| High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node Cho, Byung Jin; Suthram, S; Majhi, P; Sun, G; Kalra, P; Harris, HR; Choi, KJ, International Electron Devices Meeting, pp.727 - 730, 2007 |
| High performance RF MOSFETs and passive devices on Si Cho, Byung Jin; Chin, A; Lai, CH; Lai, ZM; Lee, CF; Zhu, C; Li, MF; et al, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
| High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics 오중건; 박관용; 김충선; 임성갑; 조병진, The 3rd Korean Graphene Symposium, 한국그래핀연구회, 2016-04-15 |
| High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack Cho, Byung Jin; Yang, WF; Lee, SJ; Whang, SJ; Lim, SY; Kwong, DL, 2007 International Conference on Solid State Devices and Materials(SSDM), pp.0 - 0, 2007-09-18 |
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