DSpace at KOASAS: Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped SiEffect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si

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Cho, Byung Jin researcher / Park, BH / Yu, SH / Kim, JC

Issue Date: 1996-05-17

Language: ENG

Citation: 1996 Spring Meeting of Materials Research Society of Korea, pp.0 - 0

URI: http://hdl.handle.net/10203/119624

Appears in Collection: EE-Conference Papers(학술회의논문)

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Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped SiEffect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si

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