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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped SiEffect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPark, BH-
dc.contributor.authorYu, SH-
dc.contributor.authorKim, JC-
dc.date.accessioned2013-03-15T12:52:35Z-
dc.date.available2013-03-15T12:52:35Z-
dc.date.created2012-02-06-
dc.date.issued1996-05-17-
dc.identifier.citation1996 Spring Meeting of Materials Research Society of Korea, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/119624-
dc.languageENG-
dc.titleEffect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si-
dc.title.alternativeEffect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname1996 Spring Meeting of Materials Research Society of Korea-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPark, BH-
dc.contributor.nonIdAuthorYu, SH-
dc.contributor.nonIdAuthorKim, JC-
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EE-Conference Papers(학술회의논문)
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