DSpace at KOASAS: Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFETFormation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET

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Cho, Byung Jin researcher / Poon, D / Tan, LS / Du, AY / Chan, L

Issue Date: 2005-07-03

Language: ENG

Citation: 3rd International Conference on Materials for Advanced Technologies, pp.5 - 5

URI: http://hdl.handle.net/10203/144958

Appears in Collection: EE-Conference Papers(학술회의논문)

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Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFETFormation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET

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