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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFETFormation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPoon, D-
dc.contributor.authorTan, LS-
dc.contributor.authorDu, AY-
dc.contributor.authorChan, L-
dc.date.accessioned2013-03-18T05:01:02Z-
dc.date.available2013-03-18T05:01:02Z-
dc.date.created2012-02-06-
dc.date.issued2005-07-03-
dc.identifier.citation3rd International Conference on Materials for Advanced Technologies, v., no., pp.5 - 5-
dc.identifier.urihttp://hdl.handle.net/10203/144958-
dc.languageENG-
dc.titleFormation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET-
dc.title.alternativeFormation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage5-
dc.citation.endingpage5-
dc.citation.publicationname3rd International Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPoon, D-
dc.contributor.nonIdAuthorTan, LS-
dc.contributor.nonIdAuthorDu, AY-
dc.contributor.nonIdAuthorChan, L-
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EE-Conference Papers(학술회의논문)
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