Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETsFully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs

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Issue Date
2003-12-08
Language
ENG
Citation

International Electron Device Meeting (IEDM), pp.0 - 0

URI
http://hdl.handle.net/10203/146667
Appears in Collection
EE-Conference Papers(학술회의논문)
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