Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate OxideEffects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide

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Issue Date
2002-07-08
Language
ENG
Citation

9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.0 - 0

URI
http://hdl.handle.net/10203/131416
Appears in Collection
EE-Conference Papers(학술회의논문)
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