Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Kang, Sang-Won

Showing results 1 to 60 of 126

1
A characterization of the thermal parameters of thermally driven polysilicon microbridge actuators using electrical impedance analysis

Lee, Jae-Youl; Kang, Sang-Won, SENSORS AND ACTUATORS A-PHYSICAL, v.75, no.1, pp.86 - 92, 1998-11

2
A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films

Kwon, Jung-Dae; Park, Jin-Seong; Lee, Han-Choon; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284, 2006-06

3
A HIGH-SPEED SI BIPOLAR-TRANSISTOR WITH SAVEN - (SELF-ALIGNED DEVICE USING VERTICAL NITRIDE)

KOO, YS; Kang, Sang-Won; AN, C, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.31, no.8, pp.2400 - 2406, 1992-08

4
A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS

LEE, SH; RYUM, BR; Kang, Sang-Won, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.2, pp.233 - 238, 1994-02

5
A PARAMETER EXTRACTION METHOD USING CUTOFF MEASUREMENT FOR A LARGE-SCALE HSPICE MODEL OF HBTS

LEE, S; Kang, Sang-Won, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.1, pp.112 - 114, 1994-01

6
A Physical Model of Floating Body Thin Film Silicon-On-Insulator nMOSFET with Parasitic Bipolar Transistor

Yu, Hyun-Kyu; Lyu, Jong-Sun; Kang, Sang-Won; Kim, Choong Ki, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.5, pp.726 - 733, 1994-05

7
A study of Cu metal deposition on amorphous Si films from Cu solutions for low-temperature crystallization of amorphous Si films

Sohn, Dong-Hyun; Lee, Jeong No; Kang, Sang-Won; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.10, pp.3592 - 3596, 1997-10

8
A study on the step coverage modeling of thin films in atomic layer deposition = 원자층 증착법으로 형성된 박막의 단차 피복성 예측을 위한 모델링에 관한 연구link

Kim, Ja-Yong; 김자용; et al, 한국과학기술원, 2007

9
A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

Ryu, Seong-Wan; Choi, Yang-Kyu; Bin Mo, Chan; Hong, Soon-Hyung; Park, Pan Kwi; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01

10
(A) study on $SrTiO_3$ thin films deposited by plasma-enhanced atomic layer deposition for DRAM capacitor dielectric = PEALD법으로 증착된 DRAM capacitor 유전체용 $SrTiO_3$ 박막의 특성에 관한 연구link

Ahn, Ji-Hoon; 안지훈; et al, 한국과학기술원, 2009

11
(A) Study on Effects of Thickness and Preferred Orientation on Dielectric Constant of Hf-Aluminate Film Deposited by PEALD = PEALD법으로 증착된 Hf-Aluminate 박막의 두께와 우선배향성이 유전상수에 미치는 영향에 관한 연구link

Moon, Hyoung-Seok; 문형석; et al, 한국과학기술원, 2008

12
(A) study on plasma-enhanced atomic layer deposition of Ta-Si-O thin films = 탄탈륨 실리콘 산화막의 플라즈마 원자층 증착법에 관한 연구link

Song, Hyun-Jung; 송현정; et al, 한국과학기술원, 2003

13
(A) study on the $HfO_2/Al_2O_3$ nanolaminated thin film by plasma-enhanced atomic layer deposition = PEALD 법으로 증착된 $HfO_2/Al_2O_3$ 박막 증착 및 특성에 관한 연구link

Cha, Eun-Soo; 차은수; et al, 한국과학기술원, 2005

14
(A) study on the $La_2O_3$ and La-Al-O films deposited by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $La_2O_3$ 및 La-Al-O 박막의 Gate 절연체 특성에 관한 연구link

Kim, Ji-Hye; 김지혜; et al, 한국과학기술원, 2009

15
(A) study on the $TiO_2/Al_2O_3$ thin film for DRAM capacitor dielectric by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $TiO_2/Al_2O_3$ 박막 증착 및 DRAM capacitor 절연체 특성에 관한 연구link

Jeon, Woo-Jin; 전우진; et al, 한국과학기술원, 2007

16
(A) study on the ald modeling for process design of multi-component thin films = 다성분계박막 공정설계를 위한 원자층증착법 모델링에 대한 연구link

Chung, Hoi-Sung; 정회성; et al, 한국과학기술원, 2008

17
(A) study on the atomic layer deposition mechanism and characteristics of Ti-N,Ti-Si-N films deposited by cycle­CVD = Cycle-CVD 법으로 증착된 Ti-N, Ti-Si-N 박막의 ALD 증착기구와 특성에 관한 연구link

Min, Jae-Sik; 민재식; et al, 한국과학기술원, 1999

18
(A) study on the atomic layer deposition of Ir and $IrO_2$ thin films = Iridium과 Iridium Oxide 박막의 ALD 증착 및 특성에 관한 연구link

Kim, Sung-Wook; 김성욱; et al, 한국과학기술원, 2007

19
(A) study on the atomic layer deposition of Ru and $RuO_2$ thin films = Ruthenium과 ruthenium oxide 박막의 ALD 증착과 특성에 관한 연구link

Kim, Jae-Hoon; 김재훈; et al, 한국과학기술원, 2003

20
(A) study on the atomic layer deposition of Ti-Al-N thin films using plasmas = 플라즈마를 이용한 Ti-Al-N 박막의 원자층 증착법에 관한 연구link

Lee, Yong-Ju; 이용주; et al, 한국과학기술원, 2003

21
(A) study on the characteristics of TaN films deposited by ALD using hydrogen plasma = 수소 플라즈마를 이용한 ALD 법으로 증착된 TaN 박막 특성에 관한 연구link

Lee, Min-Jung; 이민정; et al, 한국과학기술원, 2001

22
(A) study on the characteristics on TiN films deposited by PEALD using $TiCl_4$ = PEALD법으로 증착된 TiN 박막 특성에 관한 연구link

Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2002

23
(A) study on the deposition mechanism and characteristics of $Al_2O_3$ films deposited by atomic layer deposition using TMA and IPA = TMA와 IPA를 이용해 ALD법으로 증착된 $Al_2O_3$ 박막의 증착 기구와 특성에 관한 연구link

Yang, Sung; 양성; et al, 한국과학기술원, 2000

24
(A) study on the fabrication and characteristics of ruthenium nanocrystal formed by atomic layer deposition = 원자층 증착법을 이용한 루테늄 나노크리스탈의 증착과 전기적 특성에 관한 연구link

Oh, Heung-Ryong; 오흥룡; et al, 한국과학기술원, 2008

25
(A) study on the growth kinetic modeling for atomic layer deposition of multi-component thin films = 다성분계 박막의 ALD를 위한 박막성장의 동역학적 modeling에 관한 연구link

Kim, Jin-Hyock; 김진혁; et al, 한국과학기술원, 2005

26
(A) study on the kinetic model the thin film growth in ALD = ALD 박막 성장에 관한 동역학적 model 연구link

Lim, Jung-Wook; 임정욱; et al, 한국과학기술원, 2001

27
(A) study on the plasma-enhanced atomic layer deposition of $SrTiO_3$ thin films = PEALD 법으로 증착된 $SrTiO_3$ 박막 증착 및 특성에 관한 연구link

Kim, Ja-Yong; 김자용; et al, 한국과학기술원, 2003

28
(A) study on the plasma-enhanced atomic layer deposition of RuTiN thin films = PEALD 법으로 증착된 RuTiN 박막 증착 및 특성에 관한 연구link

Kwon, Se-Hoon; 권세훈; et al, 한국과학기술원, 2004

29
(A) study on the plasma-enhanced atomic layer deposition of Ta-N, Ti-N and Ti-Si-N thin films = Ta-N, Ti-N, Ti-Si-N 확산방지막의 플라즈마를 이용한 원자층 증착법에 관한 연구link

Park, Jin-Seong; 박진성; et al, 한국과학기술원, 2002

30
(A) study on the plasma-enhanced atomic layer deposition of TaN thin films = Peald 법으로 증착된 TaN 박막 특성에 관한 연구link

Chung, Hoi-Sung; 정회성; et al, 한국과학기술원, 2004

31
(A) study on the ruthenium thin films formed by atomic layer deposition (ALD) = ALD 증착법으로 형성된 ruthenium 박막의 특성에 관한 연구link

Kwon, Oh-Kyum; 권오겸; et al, 한국과학기술원, 2004

32
(A) study on the two-step atomic layer deposition for TaN thin films = Two-step ALD 법을 이용한 TaN 박막 형성에 관한 연구link

Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2007

33
(A) study on the ultra-thin copper film formation by chemical vapor deposition = CVD법을 이용한 ultra-thin 구리 박막 형성에 관한 연구link

Kwak, Dong-Kee; 곽동기; et al, 한국과학기술원, 2007

34
(A) study on uniformity of polishing rate in the chemical-mechanical polishing(CMP) of SiO2 thin film = 실리콘 산화막 CMP에서 연마속도 균일도 향상에 관한 연구link

Kim, Jin-Hyuck; 김진혁; et al, 한국과학기술원, 2000

35
ALD-TiN을 이용한 MOCVD Al박막의 표면 거칠기 개선에 관한 연구 = A study on the surface morphology improvement of MOCVD Al film using ALD-TiNlink

이현배; Lee, Hyun-Bae; et al, 한국과학기술원, 1999

36
ALD와 PEALD를 이용한 $Al_2O_3$ 박막 증착에 관한 연구 = A study on the $Al_2O_3$ thin film deposition by ALD and PEALDlink

전우석; Jeon, Woo-Seok; et al, 한국과학기술원, 2003

37
Analysis of a transient region during the initial stage of atomic layer deposition

Lim, Jung-Wook; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6327 - 6331, 2000-09

38
Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition

Lee, YJ; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.86, no.7, 2005-02

39
Applicability of step-coverage Modeling to TiO2 thin films in atomic layer deposition

Kim, Ja-Yong; Kim, Jin-Hyock; Ahn, Ji-Hoon; Park, Pan-Kwi; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.12, pp.H1008 - H1013, 2007

40
Atomic Layer Deposiion of Ruthenium and Ruthenium Oxide for DRAM Capacitor Electrode

Kang, Sang-Won, 4th AVS International Conference on Microelectronics and Interfaces, ICMI, 2003-03

41
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol

Jeon, WS; Yang, S; Lee, CS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.6, pp.306 - 310, 2002-06

42
Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma

Lee, Yong Ju; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.10, pp.C91 - C93, 2002-08

43
Atomic layer deposition of nickel by the reduction of preformed nickel oxide

Chae, Junghun; Park, Hyuong-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66, 2002-06

44
Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene interconnect

Kang, Sang-Won, 203rd ECS Meeting, ECS, 2003-04

45
Atomic Layer Deposition of TiN Thin Films by Alternate Supply of Tetrakis (ethymethylamino)-Titanium and Ammonia

Min, Jae-Sik; Son, Young-Woong; Kang, Won-Gu; Chun, Soung-Soon; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.0, pp.4999 - 5004, 1999

46
Bottom-up fill of submicron features in catalyst-enhanced chemical vapor deposition of copper = 촉매처리에 의한 Cu CECVD의 Bottom-up fill 현상에 관한 연구link

Shim, Kew-Chan; 심규찬; et al, 한국과학기술원, 2001

47
Bottom-up filling of submicrometer features in catalyst-enhanced chemical vapor deposition of copper

Shim, KC; Lee, HB; Kwon, OK; Park, HS; Koh, W; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.2, pp.109 - 113, 2002-02

48
Bottom-up Filling of Submicron Features in Catalyst-Enhanced CVD of Copper

Kang, Sang-Won, The Second Asian Conference on Chemical Vapor Deposition, Asian Conference on Chemical Vapor Deposition, 2001-05

49
Characterization of $TiO_2$ thin films formed by plasma enhanced atomic layer deposition = PEALD법을 이용한 $TiO_2$ 박막 증착 및 특성에 관한 연구link

Park, Pan-Kwi; 박판귀; et al, 한국과학기술원, 2002

50
CMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향 = A effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin filmlink

김우찬; Kim, Woo-Chan; et al, 한국과학기술원, 1996

51
Comparison of Tantalum Nitride Films for Different NH3/H-2/Ar Reactant States in Two-Step Atomic Layer Deposition

Kwon, Jung-Dae; Yun, Jungheum; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.2, 2009

52
Controlling the composition of Ti1–xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition

Lee, Yong Ju; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.21, no.5, pp.L13 - L15, 2003-08

53
Controlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2

Kwon, Se-Hun; Kang, Sang-Won; Kim, Kwang-Ho, APPLIED PHYSICS LETTERS, v.92, no.18, 2008-05

54
Cycle-CVD법을 이용한 tantalum oxide 원자층 단위 증착 및 특성에 관한 연구 = A study on atomic layer deposition and film characteristics of tantalum oxide using cycle-CVDlink

송현정; Song, Hyun-Jung; et al, 한국과학기술원, 1998

55
Cyclic CVD 법으로 증착된 TiN 박막의 증착 기구와 특성에 관한 연구 = A study on deposition mechanism and characteristics of TiN thin films deposited by Cyclic CVDlink

손영웅; Sohn, Young-Woong; et al, 한국과학기술원, 1997

56
Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru

Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock; Roh, Jae-Sung, APPLIED PHYSICS LETTERS, v.91, no.9, 2007-08

57
Effect of Sr-ruthenate seed layer on dielectric properties of SrTiO3 thin films prepared by plasma-enhanced atomic layer deposition

Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G185 - G188, 2008-08

58
Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition

Ahn, Ji-Hoon; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.2, pp.G5 - G8, 2009

59
Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3

Park, Pan Kwi; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.89, no.19, 2006-11

60
Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu

Lee, HB; Kwak, DK; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42, 2005

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