1 | A characterization of the thermal parameters of thermally driven polysilicon microbridge actuators using electrical impedance analysis Lee, Jae-Youl; Kang, Sang-Won, SENSORS AND ACTUATORS A-PHYSICAL, v.75, no.1, pp.86 - 92, 1998-11 |
2 | A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films Kwon, Jung-Dae; Park, Jin-Seong; Lee, Han-Choon; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284, 2006-06 |
3 | A HIGH-SPEED SI BIPOLAR-TRANSISTOR WITH SAVEN - (SELF-ALIGNED DEVICE USING VERTICAL NITRIDE) KOO, YS; Kang, Sang-Won; AN, C, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.31, no.8, pp.2400 - 2406, 1992-08 |
4 | A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS LEE, SH; RYUM, BR; Kang, Sang-Won, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.2, pp.233 - 238, 1994-02 |
5 | A PARAMETER EXTRACTION METHOD USING CUTOFF MEASUREMENT FOR A LARGE-SCALE HSPICE MODEL OF HBTS LEE, S; Kang, Sang-Won, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.1, pp.112 - 114, 1994-01 |
6 | A Physical Model of Floating Body Thin Film Silicon-On-Insulator nMOSFET with Parasitic Bipolar Transistor Yu, Hyun-Kyu; Lyu, Jong-Sun; Kang, Sang-Won; Kim, Choong Ki, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.5, pp.726 - 733, 1994-05 |
7 | A study of Cu metal deposition on amorphous Si films from Cu solutions for low-temperature crystallization of amorphous Si films Sohn, Dong-Hyun; Lee, Jeong No; Kang, Sang-Won; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.10, pp.3592 - 3596, 1997-10 |
8 | A study on the step coverage modeling of thin films in atomic layer deposition = 원자층 증착법으로 형성된 박막의 단차 피복성 예측을 위한 모델링에 관한 연구link Kim, Ja-Yong; 김자용; et al, 한국과학기술원, 2007 |
9 | A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications Ryu, Seong-Wan; Choi, Yang-Kyu; Bin Mo, Chan; Hong, Soon-Hyung; Park, Pan Kwi; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01 |
10 | (A) study on $SrTiO_3$ thin films deposited by plasma-enhanced atomic layer deposition for DRAM capacitor dielectric = PEALD법으로 증착된 DRAM capacitor 유전체용 $SrTiO_3$ 박막의 특성에 관한 연구link Ahn, Ji-Hoon; 안지훈; et al, 한국과학기술원, 2009 |
11 | (A) Study on Effects of Thickness and Preferred Orientation on Dielectric Constant of Hf-Aluminate Film Deposited by PEALD = PEALD법으로 증착된 Hf-Aluminate 박막의 두께와 우선배향성이 유전상수에 미치는 영향에 관한 연구link Moon, Hyoung-Seok; 문형석; et al, 한국과학기술원, 2008 |
12 | (A) study on plasma-enhanced atomic layer deposition of Ta-Si-O thin films = 탄탈륨 실리콘 산화막의 플라즈마 원자층 증착법에 관한 연구link Song, Hyun-Jung; 송현정; et al, 한국과학기술원, 2003 |
13 | (A) study on the $HfO_2/Al_2O_3$ nanolaminated thin film by plasma-enhanced atomic layer deposition = PEALD 법으로 증착된 $HfO_2/Al_2O_3$ 박막 증착 및 특성에 관한 연구link Cha, Eun-Soo; 차은수; et al, 한국과학기술원, 2005 |
14 | (A) study on the $La_2O_3$ and La-Al-O films deposited by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $La_2O_3$ 및 La-Al-O 박막의 Gate 절연체 특성에 관한 연구link Kim, Ji-Hye; 김지혜; et al, 한국과학기술원, 2009 |
15 | (A) study on the $TiO_2/Al_2O_3$ thin film for DRAM capacitor dielectric by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $TiO_2/Al_2O_3$ 박막 증착 및 DRAM capacitor 절연체 특성에 관한 연구link Jeon, Woo-Jin; 전우진; et al, 한국과학기술원, 2007 |
16 | (A) study on the ald modeling for process design of multi-component thin films = 다성분계박막 공정설계를 위한 원자층증착법 모델링에 대한 연구link Chung, Hoi-Sung; 정회성; et al, 한국과학기술원, 2008 |
17 | (A) study on the atomic layer deposition mechanism and characteristics of Ti-N,Ti-Si-N films deposited by cycleCVD = Cycle-CVD 법으로 증착된 Ti-N, Ti-Si-N 박막의 ALD 증착기구와 특성에 관한 연구link Min, Jae-Sik; 민재식; et al, 한국과학기술원, 1999 |
18 | (A) study on the atomic layer deposition of Ir and $IrO_2$ thin films = Iridium과 Iridium Oxide 박막의 ALD 증착 및 특성에 관한 연구link Kim, Sung-Wook; 김성욱; et al, 한국과학기술원, 2007 |
19 | (A) study on the atomic layer deposition of Ru and $RuO_2$ thin films = Ruthenium과 ruthenium oxide 박막의 ALD 증착과 특성에 관한 연구link Kim, Jae-Hoon; 김재훈; et al, 한국과학기술원, 2003 |
20 | (A) study on the atomic layer deposition of Ti-Al-N thin films using plasmas = 플라즈마를 이용한 Ti-Al-N 박막의 원자층 증착법에 관한 연구link Lee, Yong-Ju; 이용주; et al, 한국과학기술원, 2003 |
21 | (A) study on the characteristics of TaN films deposited by ALD using hydrogen plasma = 수소 플라즈마를 이용한 ALD 법으로 증착된 TaN 박막 특성에 관한 연구link Lee, Min-Jung; 이민정; et al, 한국과학기술원, 2001 |
22 | (A) study on the characteristics on TiN films deposited by PEALD using $TiCl_4$ = PEALD법으로 증착된 TiN 박막 특성에 관한 연구link Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2002 |
23 | (A) study on the deposition mechanism and characteristics of $Al_2O_3$ films deposited by atomic layer deposition using TMA and IPA = TMA와 IPA를 이용해 ALD법으로 증착된 $Al_2O_3$ 박막의 증착 기구와 특성에 관한 연구link Yang, Sung; 양성; et al, 한국과학기술원, 2000 |
24 | (A) study on the fabrication and characteristics of ruthenium nanocrystal formed by atomic layer deposition = 원자층 증착법을 이용한 루테늄 나노크리스탈의 증착과 전기적 특성에 관한 연구link Oh, Heung-Ryong; 오흥룡; et al, 한국과학기술원, 2008 |
25 | (A) study on the growth kinetic modeling for atomic layer deposition of multi-component thin films = 다성분계 박막의 ALD를 위한 박막성장의 동역학적 modeling에 관한 연구link Kim, Jin-Hyock; 김진혁; et al, 한국과학기술원, 2005 |
26 | (A) study on the kinetic model the thin film growth in ALD = ALD 박막 성장에 관한 동역학적 model 연구link Lim, Jung-Wook; 임정욱; et al, 한국과학기술원, 2001 |
27 | (A) study on the plasma-enhanced atomic layer deposition of $SrTiO_3$ thin films = PEALD 법으로 증착된 $SrTiO_3$ 박막 증착 및 특성에 관한 연구link Kim, Ja-Yong; 김자용; et al, 한국과학기술원, 2003 |
28 | (A) study on the plasma-enhanced atomic layer deposition of RuTiN thin films = PEALD 법으로 증착된 RuTiN 박막 증착 및 특성에 관한 연구link Kwon, Se-Hoon; 권세훈; et al, 한국과학기술원, 2004 |
29 | (A) study on the plasma-enhanced atomic layer deposition of Ta-N, Ti-N and Ti-Si-N thin films = Ta-N, Ti-N, Ti-Si-N 확산방지막의 플라즈마를 이용한 원자층 증착법에 관한 연구link Park, Jin-Seong; 박진성; et al, 한국과학기술원, 2002 |
30 | (A) study on the plasma-enhanced atomic layer deposition of TaN thin films = Peald 법으로 증착된 TaN 박막 특성에 관한 연구link Chung, Hoi-Sung; 정회성; et al, 한국과학기술원, 2004 |
31 | (A) study on the ruthenium thin films formed by atomic layer deposition (ALD) = ALD 증착법으로 형성된 ruthenium 박막의 특성에 관한 연구link Kwon, Oh-Kyum; 권오겸; et al, 한국과학기술원, 2004 |
32 | (A) study on the two-step atomic layer deposition for TaN thin films = Two-step ALD 법을 이용한 TaN 박막 형성에 관한 연구link Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2007 |
33 | (A) study on the ultra-thin copper film formation by chemical vapor deposition = CVD법을 이용한 ultra-thin 구리 박막 형성에 관한 연구link Kwak, Dong-Kee; 곽동기; et al, 한국과학기술원, 2007 |
34 | (A) study on uniformity of polishing rate in the chemical-mechanical polishing(CMP) of SiO2 thin film = 실리콘 산화막 CMP에서 연마속도 균일도 향상에 관한 연구link Kim, Jin-Hyuck; 김진혁; et al, 한국과학기술원, 2000 |
35 | ALD-TiN을 이용한 MOCVD Al박막의 표면 거칠기 개선에 관한 연구 = A study on the surface morphology improvement of MOCVD Al film using ALD-TiNlink 이현배; Lee, Hyun-Bae; et al, 한국과학기술원, 1999 |
36 | ALD와 PEALD를 이용한 $Al_2O_3$ 박막 증착에 관한 연구 = A study on the $Al_2O_3$ thin film deposition by ALD and PEALDlink 전우석; Jeon, Woo-Seok; et al, 한국과학기술원, 2003 |
37 | Analysis of a transient region during the initial stage of atomic layer deposition Lim, Jung-Wook; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6327 - 6331, 2000-09 |
38 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition Lee, YJ; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.86, no.7, 2005-02 |
39 | Applicability of step-coverage Modeling to TiO2 thin films in atomic layer deposition Kim, Ja-Yong; Kim, Jin-Hyock; Ahn, Ji-Hoon; Park, Pan-Kwi; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.12, pp.H1008 - H1013, 2007 |
40 | Atomic Layer Deposiion of Ruthenium and Ruthenium Oxide for DRAM Capacitor Electrode Kang, Sang-Won, 4th AVS International Conference on Microelectronics and Interfaces, ICMI, 2003-03 |
41 | Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol Jeon, WS; Yang, S; Lee, CS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.6, pp.306 - 310, 2002-06 |
42 | Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma Lee, Yong Ju; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.10, pp.C91 - C93, 2002-08 |
43 | Atomic layer deposition of nickel by the reduction of preformed nickel oxide Chae, Junghun; Park, Hyuong-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66, 2002-06 |
44 | Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene interconnect Kang, Sang-Won, 203rd ECS Meeting, ECS, 2003-04 |
45 | Atomic Layer Deposition of TiN Thin Films by Alternate Supply of Tetrakis (ethymethylamino)-Titanium and Ammonia Min, Jae-Sik; Son, Young-Woong; Kang, Won-Gu; Chun, Soung-Soon; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.0, pp.4999 - 5004, 1999 |
46 | Bottom-up fill of submicron features in catalyst-enhanced chemical vapor deposition of copper = 촉매처리에 의한 Cu CECVD의 Bottom-up fill 현상에 관한 연구link Shim, Kew-Chan; 심규찬; et al, 한국과학기술원, 2001 |
47 | Bottom-up filling of submicrometer features in catalyst-enhanced chemical vapor deposition of copper Shim, KC; Lee, HB; Kwon, OK; Park, HS; Koh, W; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.2, pp.109 - 113, 2002-02 |
48 | Bottom-up Filling of Submicron Features in Catalyst-Enhanced CVD of Copper Kang, Sang-Won, The Second Asian Conference on Chemical Vapor Deposition, Asian Conference on Chemical Vapor Deposition, 2001-05 |
49 | Characterization of $TiO_2$ thin films formed by plasma enhanced atomic layer deposition = PEALD법을 이용한 $TiO_2$ 박막 증착 및 특성에 관한 연구link Park, Pan-Kwi; 박판귀; et al, 한국과학기술원, 2002 |
50 | CMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향 = A effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin filmlink 김우찬; Kim, Woo-Chan; et al, 한국과학기술원, 1996 |
51 | Comparison of Tantalum Nitride Films for Different NH3/H-2/Ar Reactant States in Two-Step Atomic Layer Deposition Kwon, Jung-Dae; Yun, Jungheum; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.2, 2009 |
52 | Controlling the composition of Ti1–xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition Lee, Yong Ju; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.21, no.5, pp.L13 - L15, 2003-08 |
53 | Controlling the temperature coefficient of resistance and resistivity in RuO2-TiO2 thin films by the intermixing ratios between RuO2 and TiO2 Kwon, Se-Hun; Kang, Sang-Won; Kim, Kwang-Ho, APPLIED PHYSICS LETTERS, v.92, no.18, 2008-05 |
54 | Cycle-CVD법을 이용한 tantalum oxide 원자층 단위 증착 및 특성에 관한 연구 = A study on atomic layer deposition and film characteristics of tantalum oxide using cycle-CVDlink 송현정; Song, Hyun-Jung; et al, 한국과학기술원, 1998 |
55 | Cyclic CVD 법으로 증착된 TiN 박막의 증착 기구와 특성에 관한 연구 = A study on deposition mechanism and characteristics of TiN thin films deposited by Cyclic CVDlink 손영웅; Sohn, Young-Woong; et al, 한국과학기술원, 1997 |
56 | Effect of crystallinity and nonstoichiometric region on dielectric properties of SrTiO3 films formed on Ru Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock; Roh, Jae-Sung, APPLIED PHYSICS LETTERS, v.91, no.9, 2007-08 |
57 | Effect of Sr-ruthenate seed layer on dielectric properties of SrTiO3 thin films prepared by plasma-enhanced atomic layer deposition Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G185 - G188, 2008-08 |
58 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition Ahn, Ji-Hoon; Kim, Ja-Yong; Kim, Jin-Hyock; Roh, Jae-Sung; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.2, pp.G5 - G8, 2009 |
59 | Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 Park, Pan Kwi; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.89, no.19, 2006-11 |
60 | Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu Lee, HB; Kwak, DK; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42, 2005 |