Showing results 1 to 5 of 5
ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11 |
Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11 |
Energy gap and band alignment of (HfO2)x(Al2O3)1-x on (100) Si by XPS Cho, Byung Jin; Yu, HY; Li, MF; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ, 2002 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2002-12-17 |
Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface Cho, Byung Jin; Kim, SJ; Lim, HF; Hu, H; Yu, XF; Yu, HY; Li, MF, 2nd International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11 |
Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application Cho, Byung Jin; Lim, HF; Kim, SJ; Hu, H; Yu, XF; Yu, HY; Li, MF, International Conference on Materials for Advanced Technologies, pp.532 - 532, 2003-12-11 |
Discover