ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices applicationALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application

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Issue Date
2003-12-11
Language
ENG
Citation

2nd International Conference on Materials for Advanced Technologies, pp.562 - 562

URI
http://hdl.handle.net/10203/145113
Appears in Collection
EE-Conference Papers(학술회의논문)
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