Showing results 12 to 18 of 18
Power Reduction for Recovery of a FinFET by Electrothermal Annealing Han, Joon-Kyu; Park, Jun-Young; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.151, pp.6 - 10, 2019-01 |
Reliability Improvement of Gate-All-Around Junctionless SONOS Memory by Joule Heat From Inherent Nanowire Current Lee, Jung-Woo; Han, Joon-Kyu; Kim, Myung-Su; Yu, Ji-Man; Jung, Jin-Woo; Yun, Seong-Yun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.11, pp.6133 - 6138, 2022-11 |
Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03 |
Triboelectric nanogenerator for a repairable transistor with self-powered electro-thermal annealing Kim, Weon-Guk; Han, Joon-Kyu; Tcho, Il-Woong; Park, Jun-Young; Yu, Ji-Man; Choi, Yang-Kyu, NANO ENERGY, v.76, pp.105000, 2020-10 |
Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02 |
Ultra-fast erase method of SONOS flash memory by instantaneous thermal excitation = 열적 여기 현상을 이용한 빠른 동작속도의 전하 트랩형 플래시 메모리에 관한 연구link Ahn, Dae-Chul; 안대철; et al, 한국과학기술원, 2016 |
저온 공정 a-IGZO 투명 유연 박막 트랜지스터의 특성 및 신뢰성 향상을 위한 줄 발열 열처리 = Electro-thermal annealing for advanced performance and stabilities of low temperature fabricated transparent and flexible a-IGZO thin film transistorslink 이명근; 최경철; Choi, Kyung Cheol; 박상희; et al, 한국과학기술원, 2017 |
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