Browse "School of Electrical Engineering(전기및전자공학부)" by Author Park, Dae-Woong
Showing results 1 to 23 of 23
| 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining Yun, ByeongHun; Park, Dae-Woong; Choi, Kyung-Sik; Song, Ho-Jin; Lee, Sang-Gug, 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021, Institute of Electrical and Electronics Engineers Inc., 2021-11 |
| 280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting Double-embedded-Gmax-core Yun, ByeongHun; Park, Dae-Woong; Choi, Chan-Gyu; Song, Ho-Jin; Lee, Sang-Gug, 2022 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2022, pp.91 - 94, Institute of Electrical and Electronics Engineers Inc., 2022-06-20 |
| 500 GHz CMOS heterodyne imager adopting fourth subharmonic passive mixer Choi, Kyungsik; Park, Dae-Woong; Utomo, Dzuhri Radityo; Lee, Sang-Gug, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.2, pp.683 - 687, 2020-02 |
| A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency Gmax-Core With Dual-Band Matching Park, Dae-Woong; Yun, Byeonghun; Utomo, Dzuhri Radityo; Hong, Jong-Phil; Lee, Sang-Gug, IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.13, no.3, pp.221 - 230, 2023-05 |
| A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak G(max)-Core Park, Dae-Woong; Utomo, Dzuhri Radityo; Lam, Bao Huu; Lee, Sang-Gug; Hong, Jong-Phil, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.54, no.6, pp.1613 - 1623, 2019-06 |
| A 230-260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core Park, Dae-Woong; Dzuhri Radityo Utomo; Hong, Jong-Phil; Lee, Sang-Gug, 23rd Asia and South Pacific Design Automation Conference (ASP-DAC), pp.301 - 302, IEEE, 2018-01 |
| A 230–260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core Park, Dae-Woong; Dzuhri Radityo Utomo; Hong, Jong-Phil; Lee, Sang-Gug, 2017 Symposium on VLSI Circuits, IEEE, 2017-06 |
| A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique Park, Dae-Woong; Utomo, Dzuhri Radityo; Hong, Jong-Phil; Vaesen, Kristof; Wambacq, Piet; Lee, Sang-Gug, 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, IEEE, 2020-06-18 |
| A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core Yun, Byeonghun; Park, Dae-Woong; Choi, Won-Jong; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.3, pp.292 - 295, 2021-03 |
| A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator Utomo, Dzuhri Radityo; Park, Dae-Woong; Hong, Jong-Phil; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.7, pp.893 - 896, 2021-07 |
A 270-GHz Push-Push Transformer-Based Oscillator Adopting Power Leakage Suppression Technique Utomo, Dzuhri Radityo; Park, Dae-Woong; Hong, Jong-Phil; Lee, Sang-Gug, ELECTRONICS, v.8, no.11, 2019-11 |
| A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW Park, Dae-Woong; Utomo, Dzuhri Radityo; Lam, Bao Huu; Hong, Jong-Phil; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.1, pp.79 - 81, 2018-01 |
| A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/−3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS Utomo, Dzuhri Radityo; Park, Dae-Woong; Yun, Byeonghun; Lee, Sang-Gug, 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, IEEE, 2020-06-18 |
| A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G(max)-Core Yun, Byeonghun; Park, Dae-Woong; Mahmood, Hafiz Usman; Kim, Doyoon; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.69, no.5, pp.2519 - 2530, 2021-05 |
| A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched G(max)-Core Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE ACCESS, v.9, pp.99039 - 99049, 2021-10 |
| Design of high-gain and wideband sub-THz amplifiers = 고이득 및 광대역 서브 테라헤르츠 증폭기 설계link Park, Dae-Woong; Lee, Sang Gug; et al, 한국과학기술원, 2018 |
| Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G(max) Gain Boosting Technique Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Hong, Jong-Phil; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.11, pp.3388 - 3398, 2021-11 |
| Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector Kim, Suna; Khan, Muhammad Ibrahim Wasiq; Park, Dae-Woong; Lee, Sang-Gug; Kim, Kyung Rok, IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.8, no.6, pp.681 - 687, 2018-11 |
| H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G(max)-Core and Transmission Line-Based Zero-Degree Power Networks Yun, Byeonghun; Park, Dae-Woong; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.11, pp.3089 - 3102, 2023-11 |
| High-Power 268-GHz Push-Push Transformer-Based Oscillator With Capacitive Degeneration Utomo, Dzuhri Radityo; Park, Dae-Woong; Lee, Sang-Gug; Hong, Jong-Phil, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.7, pp.612 - 614, 2018-07 |
| MOSFET Characteristics for Terahertz Detector Application From On-Wafer Measurement Kim, Suna; Park, Dae-Woong; Choi, Kyoung-Young; Lee, Sang-Gug, IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.5, no.6, pp.1068 - 1077, 2015-11 |
| Nonlinear Analysis of Nonresonant THz Response of MOSFET and Implementation of a High-Responsivity Cross-Coupled THz Detector Khan, Muhammad Ibrahim Wasiq; Kim, Suna; Park, Dae-Woong; Kim, Hyoung-Jun; Han, Seok-Kyun; Lee, Sang-Gug, IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.8, no.1, pp.108 - 120, 2018-01 |
| Resistive self-mixing based analytical model for terahertz MOSFET detectors = resistive self-mixing을 기반으로 한 테라헤르츠 모스펫 디텍터의 분석적 모델link Park, Dae-Woong; 박대웅; et al, 한국과학기술원, 2015 |
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