A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core

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This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain (G(max)) core. By the adoption of the dual-shunt-element-based G(max)-core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, P-sat of 3/3.8 dBm, OP1 dB of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2021-03
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.3, pp.292 - 295

ISSN
1531-1309
DOI
10.1109/LMWC.2020.3046745
URI
http://hdl.handle.net/10203/282384
Appears in Collection
EE-Journal Papers(저널논문)
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