A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator

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A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator's Q-factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and -96.8 dBc/Hz of the phase noise at a 10-MHz offset.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2021-07
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.7, pp.893 - 896

ISSN
1531-1309
DOI
10.1109/LMWC.2021.3077066
URI
http://hdl.handle.net/10203/286912
Appears in Collection
EE-Journal Papers(저널논문)
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