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Shin, Mincheol (신민철)
교수, (전기및전자공학부)
Research Area
Semiconductor Device/Circuit, Semiconductor Materials, Computational Nanotechnology, Nano Device Simulation
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    A Novel Neural-Network Device Modeling Based on Physics-Informed Machine Learning

    Kim, Bokyeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.11, pp.6021 - 6025, 2023-11

    2
    Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green's function: heterostructure mode space method and core charge approximation

    Jeon, Seonghyeok; Shin, Mincheol, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.22, no.5, pp.1167 - 1180, 2023-10

    3
    Circuit-Level Memory Cell Simulation of Magnetic Bloch Line Racetrack Memory

    Lee, Chanhyeong; Kim, Kabjin; Shin, Mincheol, IEEE TRANSACTIONS ON MAGNETICS, v.59, no.8, 2023-08

    4
    Performance Boost of Si TFETs by Insertion of III-V Dipole Formation Layer: A First Principle Study

    Lim, Yeongjun; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.6, pp.2956 - 2961, 2023-06

    5
    Ferroelectric Nanopillar Field-Effect Transistors: Quantum Transport Simulations Based on a Three-Dimensional Phase Field

    Lee, Hyeongu; Kim, Yoon-Suk; Shin, Mincheol, PHYSICAL REVIEW APPLIED, v.19, no.5, 2023-05

    6
    A novel ferroelectric nanopillar multi-level cell memory

    Lee, Hyeongu; Shin, Mincheol, SOLID-STATE ELECTRONICS, v.200, 2023-02

    7
    Efficient atomistic simulations of lateral heterostructure devices with metal contacts

    Shin, Mincheol; Jeon, Seonghyeok; Joo, Kanghyun, SOLID-STATE ELECTRONICS, v.198, 2022-12

    8
    DFT-NEGF Simulation Study of Co2FeAl-MgO-Co2FeAl Magnetic Tunnel Junctions Under Biaxial Strain

    Noh, Seongcheol; Sanvito, Stefano; Shin, Mincheol, IEEE TRANSACTIONS ON MAGNETICS, v.58, no.5, 2022-05

    9
    First-Principles-Based Quantum Transport Simulations of Interfacial Point Defect Effects on InAs Nanowire Tunnel FETs

    Lee, Hyeongu; Cho, Yucheol; Jeon, Seonghyeok; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.11, pp.5901 - 5907, 2021-11

    10
    Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

    Kang, Doo Hyung; Shin, Mincheol, SCIENTIFIC REPORTS, v.11, no.1, pp.22842, 2021-11

    11
    Racetrack memory based on current-induced motion of topological Bloch lines

    Yang, Jiseok; Moon, Kyoung-Woong; Park, Albert Min Gyu; et al, APPLIED PHYSICS EXPRESS, v.14, no.10, 2021-10

    12
    Critical switching current of a perpendicular magnetic tunnel junction owing to the interplay of spin-transfer torque and spin-orbit torque

    Kang, Doo Hyung; Byun, Ji-Hun; Shin, Mincheol, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.43, 2021-10

    13
    Hetero-structure mode space method for efficient device simulations

    Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.130, no.10, pp.104303 - 104303, 2021-09

    14
    Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition

    Kim, Bokyeom; Shin, Mincheol, IEEE ACCESS, v.9, pp.108480 - 108494, 2021-08

    15
    Off-state leakage in MOSFET considering source/drain extension regions

    Hur, Jae; Jeong, Woo Jin; Shin, Mincheol; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.8, pp.085018, 2021-08

    16
    Switching Performance Comparison between Conventional SOT and STT-SOT Write Schemes with Effect of Shape Deformation

    Byun, Jihun; Kang, Du-Hyung; Shin, Mincheol, AIP ADVANCES, v.11, no.1, 2021-01

    17
    Atomistic Asymmetric Effect on the Performance of HfO2-based Ferroelectric Tunnel Junctions

    Seo, Junbeom; Shin, Mincheol, PHYSICAL REVIEW APPLIED, v.14, no.5, 2020-11

    18
    Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach

    Kim, Bokyeom; Seo, Junbeom; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468, 2020-02

    19
    Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors

    Ahn, Yongsoo; Shin, Mincheol, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676, 2019-08

    20
    Performance limitations of nanowire resonant-tunneling transistors with steep switching analyzed by Wigner transport simulation

    Lee, Joon-Ho; Shin, Mincheol; Seo, Jeong Hyeon, JOURNAL OF APPLIED PHYSICS, v.125, no.17, 2019-05

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