A Novel Neural-Network Device Modeling Based on Physics-Informed Machine Learning

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In this work, we present a novel physics-informed machine learning (PIML)-based neural-network device modeling that predicts both device performance and spatial physical quantities in real-time. Using cutting-edge technologies such as physics-informed neural network (NN) and physics-informed deep operator networks, our approach suggests interpolation and extrapolation strategies in device physics modeling. Despite being trained with a small number of bias voltages, our model demonstrates remarkable accuracy, with a mean absolute percentage error (MAPE) of 0.12% for predicting potential for interpolation and 0.19% for extrapolation. Our approach can be used for data-efficient NN modeling for TCAD and real-time physics analysis in the spatial domain.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2023-11
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.11, pp.6021 - 6025

ISSN
0018-9383
DOI
10.1109/TED.2023.3316635
URI
http://hdl.handle.net/10203/314748
Appears in Collection
EE-Journal Papers(저널논문)
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