Atomistic Asymmetric Effect on the Performance of HfO2-based Ferroelectric Tunnel Junctions

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We investigate the effects of atomistic interfaces on the device performance of HfO2-based ferroelectric tunnel junctions (FTJs) using density-functional calculations. The atomistic structures of HfO2 FTJs with different interfacial conditions are constructed and their device performances, such as on:off current ratio are evaluated. We find that without the external effects such as dissimilar metal electrodes or composite layers inserted to make an asymmetric potential barrier, the intrinsic effects stemming from the interface dipoles can be tailored toward achieving high device performance. Especially, the atomistic asymmetry effect, which gives the same effect as the built-in electric field, can be exploited for a high on:off current ratio at low external bias voltages. We demonstrate that the asymmetrically terminated Zr-doped HfO2 FTJ exhibits a current ratio of 12, which is higher than any previously reported values, theoretically or experimentally, for HfO2-based FTJs with symmetric metal electrodes.
Publisher
AMER PHYSICAL SOC
Issue Date
2020-11
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW APPLIED, v.14, no.5

ISSN
2331-7019
DOI
10.1103/PhysRevApplied.14.054018
URI
http://hdl.handle.net/10203/277747
Appears in Collection
EE-Journal Papers(저널논문)
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