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Choi, Sung-Yool (최성율)
교수, School of Electrical Engineering(전기및전자공학부)
Research Area
Graphene, 2D materials, Nanoelectronic Devices, Flexible electronics, Display
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Synthesis of Ultrathin Metal Nanowires with Chemically-Exfoliated Tungsten Disulfide Nanosheet

    Kim, Tae In; Park, Ick Joon; Choi, Sung-Yoolresearcher, NANO LETTERS, v.20, no.05, pp.3740 - 3746, 2020-05

    2
    Low-Thermal-Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron-Doped Reduced Graphene Oxide

    Cha, Jun-Hwe; Kim, Dong-Ha; Park, Cheolmin; et al, ADVANCED SCIENCE, v.7, no.7, pp.1903318, 2020-04

    3
    Varying electronic coupling at graphene-copper interfaces probed with Raman spectroscopy

    Choi, Jieun; Koo, Seonghyun; Song, Myeongin; et al, 2D MATERIALS, v.7, no.2, pp.025006, 2020-04

    4
    Flexible and Transparent Thin Film Transistor Based on 2D Materials for Active-Matrix Display

    Park, Hamin; Oh, Dong Sik; Lee, Khang June; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.4749 - 4754, 2020-01

    5
    High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure

    Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01

    6
    A feasible strategy to prepare quantum dot-incorporated carbon nanofibers as free-standing platforms

    Song, Taeyoung; Cheong, Jun Young; Choi, Ji Yong; et al, NANOSCALE ADVANCES, v.1, no.10, pp.3948 - 3956, 2019-10

    7
    Order-of-Magnitude, Broadband-Enhanced Light Emission from Quantum Dots Assembled in Multiscale Phase-Separated Block Copolymers

    Kim, Geon Yeong; Kim, Shinho; Choi, Jinyoung; et al, NANO LETTERS, v.19, no.10, pp.6827 - 6838, 2019-09

    8
    Sonochemical synthesis of HKUST-1-based CuO decorated with Pt nanoparticles for formaldehyde gas-sensor applications

    Lee, Jae Eun; Kim, Do Yeob; Lee, Hyung-Kun; et al, SENSORS AND ACTUATORS B-CHEMICAL, v.292, pp.289 - 296, 2019-08

    9
    Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

    Bae, Hagyoul; Kim, Daewon; Seo, Myungsoo; et al, ADVANCED MATERIALS TECHNOLOGIES, v.4, no.8, 2019-08

    10
    Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics

    Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05

    11
    Chemically exfoliated 1T-phase transition metal dichalcogenide nanosheets for transparent antibacterial applications

    Kim, Tae In; Kim, Jaeyoung; Park, Ick Joon; et al, 2D MATERIALS, v.6, no.2, pp.025025, 2019-04

    12
    Nonvolatile Memories Based on Graphene and Related 2D Materials

    Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan; et al, ADVANCED MATERIALS, v.31, no.10, pp.1806663, 2019-03

    13
    Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

    Jang, Byung Chul; Kim, Seong-Gyu; Yang, SangYoon; et al, NANO LETTERS, v.19, no.2, pp.839 - 849, 2019-02

    14
    Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene Spacer

    Lee, Khang June; Kim, Shinho; Hong, Woonggi; et al, SCIENTIFIC REPORTS, v.9, pp.1199, 2019-02

    15
    Improved Electrical Contact Properties of MoS2-Graphene Lateral Heterostructure

    Hong, Woonggi; Shim, Gi Woong; Yang, SangYoon; et al, ADVANCED FUNCTIONAL MATERIALS, v.29, no.6, pp.1807550, 2019-02

    16
    Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power

    Shin, Gwang Hyuk; Park, Jung Hoon; Lee, Khang June; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.7, pp.7626 - 7634, 2019-01

    17
    Large-Area CVD-Grown MoS2 Driver Circuit Array for Flexible Organic Light-Emitting Diode Display

    Woo, Youngjun; Hong, Woonggi; Yang, SangYoon; et al, Advanced Electronic Materials, v.4, no.11, pp.1800251, 2018-11

    18
    Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

    Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; et al, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11

    19
    A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor

    Hur, Jae; Jang, Byung Chul; Park, Jihun; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11

    20
    Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

    Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10

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