Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs

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Molybdenum disulfide (MoS2) has been attracting attention for its theoretically outstanding electrical characteristics such as an appropriate bandgap, high mobility, and atomically thin nature. However, when MoS2 is used to fabricate field-effect transistors (FETs), it is difficult to achieve intrinsically good performance due to severe scattering caused by charged impurities (CIs), surface roughness, and surface optical phonons (SOPs). Since SOP scattering is widely acknowledged as the dominant mechanism degrading mobility at room temperature, in this study, we aim to suppress the SOP scattering originating from high-kappa oxide dielectrics (such as Al2O3 with a low SOP energy of 48.2 meV), by inserting aluminum nitride (AlN) interfacial layers with a high SOP energy of 81.4 meV. MoS2 FETs with an AlN sandwich structure exhibit higher on-current levels and field-effect mobility by approximately 2.5 and 2.3 times, respectively, compared with Al2O3 sandwiched MoS2 FETs. Furthermore, the suppression of SOP scattering by the AlN interfacial layers can be confirmed by the power-law relationship between temperature and mobility, mu proportional to T-gamma. As the number of interfaces between MoS2 and AlN increases from 0 to 2, the gamma value decreases from 1.3 to 0.12.
Publisher
ROYAL SOC CHEMISTRY
Issue Date
2024-09
Language
English
Article Type
Article
Citation

NANOSCALE, v.16, no.35, pp.16602 - 16610

ISSN
2040-3364
DOI
10.1039/d4nr01231c
URI
http://hdl.handle.net/10203/322973
Appears in Collection
EE-Journal Papers(저널논문)
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