Browse "College of Engineering(공과대학)" by Author Ryu, Seong-Wan

Showing results 1 to 36 of 36

1
A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sung-Ho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.632 - 634, 2008-06

2
A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET

Choi, Yang-Kyu; Ku, Cheon-Hak; Ryu, Seong-Wan, IEEE Electron Device Society, pp.185 - 188, 2005-06

3
A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs

Choi, Yang-Kyu; Choi, Sungjin; Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sungho, The 15th Korean Conference on Semiconductors (KCS), pp.617 - 618, 2008-02

4
A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs

Choi, Yang-Kyu; Kang, Hyun-Sik; Ryu, Seong-Wan, IEEE Electron Device Society, pp.63 - 66, 2005-06

5
A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

Bae, Dong-Il; Ryu, Seong-Wan; Gu, Bonsang; Choi, Yang-Kyu, MICROELECTRONIC ENGINEERING, v.87, no.2, pp.135 - 138, 2010-02

6
A Novel Capacitorless DRAM Operated by Gate-Induced Drain-Leakage (GIDL) for Improved Sensing Window and Low Power Operation

Choi, Yang-Kyu; Choi, Sung-Jin; Ryu, Seong-Wan; Han, Jin-Woo; Kim, Sungho, The 16th Korean Conference on Semiconductors, pp.62 - 63, 2009-02

7
A study of the memory effects of metallic core-metal oxide shell nanocrystals by a micelle dipping technique

Kim, Chung-Jin; Choi, Sung-Jin; Ryu, Seong-Wan; Kim, Sung-Ho; Chang, Jae-Joon; Bae, Su-Hak; Sohn, Byeong-Hyeok; et al, NANOTECHNOLOGY, v.21, no.12, 2010-03

8
A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

Ryu, Seong-Wan; Choi, Yang-Kyu; Bin Mo, Chan; Hong, Soon-Hyung; Park, Pan Kwi; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01

9
Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application

Ryu, Seong-Wan; Lee, Jong-Won; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382, 2009-03

10
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04

11
Extremely Scaled 3-Dimensional Multiple Gate Technologies for Terabit Era (Invited)

Choi, Yang-Kyu; Kim, Kuk-Hwan; Han, Jin-Woo; Ryu, Seong-Wan; Lee, Hyunjin, International Conference on Nano Science and Nano Technology, pp.15 - 16, 2006-12

12
Extremely scaled 3-dimensional multiple-gate technologies for terabit era

Choi, Yang-Kyu; Kim, Kuk-Hwan; Han, Jin-Woo; Ryu, Seong-Wan; Lee, Hyunjin, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.7, no.11, pp.4126 - 4130, 2007-11

13
Flash memory utilizing discrete charge storage node for universal memory = 이산적 전하 저장소가 삽입된 플래시 메모리 및 Universal 메모리로의 응용link

Ryu, Seong-Wan; 류승완; et al, 한국과학기술원, 2009

14
Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application

Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Seo, Myung-Soo; Yun, Chang-Hun; Yoo, Seung-Hyup; Choi, Yang-Kyu, SMALL, v.6, no.15, pp.1617 - 1621, 2010-08

15
Fully Depleted Polysilicon TFTs for Capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Kim, Chung-Jin; Kim, Sung-Ho; Moon, Dong-Il; Choi, Sung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.742 - 744, 2009-07

16
Gate-All-Around Silicon Nanowire MOSFETs on Bulk Substrate

Choi, Yang-Kyu; Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sungho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; et al, The 16th Korean Conference on Semiconductors, pp.648 - 649, 2009-02

17
Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02

18
Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

Lee, Jong-Won; Ryu, Seong-Wan; Shin, Dong Ok; Kim, Bong Hoon; Kim, Sang Ouk; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.6, pp.640 - 643, 2009-06

19
Gold Nanocrystal-embedded Vertical Device for the 3-D Structural Nonvolatile Memory Applications

Choi, Yang-Kyu; Ryu, Seong-Wan; Kim, Chung-Jin, The 14th Korean Conference on Semiconductors, pp.63 - 64, 2007-02

20
Gold nanoparticle embedded silicon nanowire biosensor for applications of label-free DNA detection

Ryu, Seong-Wan; Kim, Chang-Hoon; Han, Jin-Woo; Kim, Chung-Jin; Jung, Cheul-Hee; Park, Hyun-Gyu; Choi, Yang-Kyu, BIOSENSORS BIOELECTRONICS, v.25, no.9, pp.2182 - 2185, 2010-05

21
Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02

22
Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET

Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05

23
Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3232 - 3235, 2009-12

24
Itinerant Helimagnetic Single-Crystalline MnSi Nanowires

Seo, Kwan-Yong; Yoon, Ha-Na; Ryu, Seong-Wan; Lee, Sung-Hun; Jo, Young-Hun; Jung, Myung-Hwa; Kim, Jin-Hee; et al, ACS NANO, v.4, no.5, pp.2569 - 2576, 2010-05

25
Metal nanocrystals synthesized with a micellar template based on a diblock copolymer for three-dimensional nonvolatile memory

Kim, Chung-Jin; Ryu, Seong-Wan; Choi, Yang-Kyu; Chang, Jae-Joon; Bae, Su-Hak; Sohn, Byeong-Hyeok, APPLIED PHYSICS LETTERS, v.93, no.5, 2008-08

26
Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface

Gupta, Dipti; Anand, Manish; Ryu, Seong-Wan; Choi, Yang-Kyu; Yoo, Seunghyup, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12

27
Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution

Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03

28
Nonvolatile Memory Characteristics of NMOSFET with Silver Nanocrystals Synthesized by Thermal Decomposition Process

Ryu, Seong-Wan; Chan Bin Mo; Hong, Soon-hyung; Choi, Yang-Kyu, Proceedings of IEEE Nanotechnology Materials and Devices Conference, IEEE Nanotechnology Council , National Center for Nanomaterials Technology, Korea, 2006-10-22

29
Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Kim, Sung-Ho; Im, Mae-Soon; Choi, Sung-Jin; Kim, Jin-Soo; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783, 2008-07

30
Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03

31
Punchthrough Characteristics of CMOS Souble-Gate FinFET

Choi, Yang-Kyu; Ryu, Seong-Wan; Lee, Hyunjin, The 12th Korean Conference on Semiconductors (KCS), pp.97 - 98, 2005-02

32
Refinement of Unified Random Access Memory

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Kim, Jin-Soo; Kim, Kwang-Hee; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.601 - 608, 2009-04

33
Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Lee, Hyunjin; Yu, Lee-Eun; Ryu, Seong-Wan; Han, Jin-Woo; Jeon, Kanghoon; Jang, Dong-Yoon; Kim, Kuk-Hwan; et al, IEEE Symposium on VLSI Technology Digest of Technical Papaers, pp. 70-71, 2006-06-13

34
Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03

35
Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application

Ryu, Seong-Wan; Huang, Xing-Jiu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858, 2007-08

36
Wet chemical needlelike assemblies of single-walled carbon nanotubes on a silicon surface

Huang, Xing-Jiu; Ryu, Seong-Wan; Im, Hyung-Soon; Choi, Yang-Kyu, LANGMUIR, v.23, no.3, pp.991 - 994, 2007-01

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