A Novel Capacitorless DRAM Operated by Gate-Induced Drain-Leakage (GIDL) for Improved Sensing Window and Low Power Operation
- Issue Date
- 2009-02
- Language
- KOR
- Citation
The 16th Korean Conference on Semiconductors, pp.62 - 63
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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