A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

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New investigations are presented here on a high-density and DRAM-like high-speed non-volatile memory (NVM) application of unified RAM (URAM). For a high-density application of URAM. multiple data storage is demonstrated with a multi-dual cell (MDC). Because each NVM state can be split by programming with a one-transistor (IT) DRAM without a capacitor, the total number of memory states can be doubled. Furthermore, a high-speed DRAM-level NVM scheme is proposed for the joint operation of IT DRAM buffer programming and NVM post-background programming. The MDC and the proposed scheme are unique URAM properties that can extend the application range of memory devices. (C) 2009 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2010-02
Language
English
Article Type
Article
Citation

MICROELECTRONIC ENGINEERING, v.87, no.2, pp.135 - 138

ISSN
0167-9317
DOI
10.1016/j.mee.2009.06.027
URI
http://hdl.handle.net/10203/93458
Appears in Collection
EE-Journal Papers(저널논문)
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