Punchthrough Characteristics of CMOS Souble-Gate FinFET

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Hyunjin
Issue Date
2005-02
Language
KOR
Citation

The 12th Korean Conference on Semiconductors (KCS), pp.97 - 98

URI
http://hdl.handle.net/10203/145100
Appears in Collection
EE-Conference Papers(학술회의논문)
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