EE-Journal Papers(저널논문)

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 14101 to 14120 of 14218

14101
Universal single-phonon variable range hopping conduction for inorganic semiconducting polycrystalline films

Myong, SY; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.88, pp.894 - 903, 2006-05

14102
Hydrogen passivation of visible p-i-n type thin-film light-emitting diodes

Lee, JW; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.68, no.8, pp.1031 - 1033, 1996-02

14103
Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Cho, WY; Lim, Koeng Su; Ostapenko, S, APPLIED PHYSICS LETTERS, v.75, no.6, pp.760 - 762, 1999-08

14104
In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells

Myong, SY; Kim, SS; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.84, pp.5416 - 5418, 2004-06

14105
Carrier transport through boron-doped amorphous diamond-like carbon p layer of amorphous silicon based p-i-n solar cells

Lee, CH; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.75, no.4, pp.569 - 571, 1999-07

14106
Inclusion of nanosized silicon grains in hydrogenated protocrystalline silicon multilayers and its relation to stability

Myong, SY; Kwon, SW; Lim, Koeng Su; Kondo, M; Konagai, M, APPLIED PHYSICS LETTERS, v.88, pp.869 - 875, 2006-02

14107
Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells

Lee, CH; Jeon, JW; Lim, Koeng Su, JOURNAL OF APPLIED PHYSICS, v.87, no.12, pp.8778 - 8785, 2000-06

14108
Modeling of annealing kinetics for hydrogenated-amorphous-silicon-based solar cells using two-component metastable defects

Myong, SY; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06

14109
Effect of hydrogen dilution on carrier transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys

Myong, SY; Lim, Koeng Su; Konagai, M, APPLIED PHYSICS LETTERS, v.88, pp.228 - 236, 2006-03

14110
Ex situ hydrogen passivation effect of visible p-i-n type thin-film light-emitting diode characteristics

Lee, JW; Lim, Koeng Su, JOURNAL OF APPLIED PHYSICS, v.81, no.5, pp.2432 - 2436, 1997-03

14111
Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure

Myong, SY; Kim, SS; Lim, Koeng Su, JOURNAL OF APPLIED PHYSICS, v.95, pp.1525 - 1530, 2004-02

14112
Directionally classified eigenblocks for localized feature analysis in face recognition

Shin, HC; Choi, HC; Kim, Seong-Dae, OPTICAL ENGINEERING, v.45, pp.43 - 49, 2006-07

14113
Bidirectional WDM self-healing ring network based on simple bidirectional Add/Drop amplifier modules

Kim, CH; Lee, CH; Chung, Yun Chur, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.9, pp.1340 - 1342, 1998-09

14114
Low-frequency noise characteristics in p-channel FinFETs

Lee, JS; Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.722 - 724, 2002-12

14115
Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

Lee, JS; Ha, DW; Choi, Yang-Kyu; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33, 2003-01

14116
A spacer patterning technology for nanoscale CMOS

Choi, Yang-Kyu; King, TJ; Hu, CM, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.3, pp.436 - 441, 2002-03

14117
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Lee, JS; Choi, Yang-Kyu; Ha, DW; Balasubramanian, S; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.186 - 188, 2003-03

14118
Nanoscale CMOS spacer FinFET for the terabit era

Choi, Yang-Kyu; King, TJ; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.23, no.1, pp.25 - 27, 2002-01

14119
Extremely scaled silicon nano-CMOS devices

Chang, LL; Choi, Yang-Kyu; Ha, DW; Ranade, P; Xiong, SY; Bokor, J; Hu, CM; et al, PROCEEDINGS OF THE IEEE, v.91, no.11, pp.1860 - 1873, 2003-11

14120
Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

Ha, D; Takeuchi, H; Choi, Yang-Kyu; King, TJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.12, pp.1989 - 1996, 2004-12

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