In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells

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We proposed an in situ postdeposition ultraviolet treatment in an Ar ambient (UTA) to improve the p/i interface of amorphous silicon based solar cell. We have increased the conversion efficiency by similar to16% by improving the built-in potential and reducing recombination at the p/i interface. Through spectroscopic ellipsometry and Fourier-transform infrared measurements, it is concluded that the UTA process induces structural modification of the p-type hydrogenated amorphous silicon-carbide (p-a-SiC:H) window layer. An ultrathin p-a-SiC:H contamination layer formed during the UTA process acts as a buffer layer at the interface. (C) 2004 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2004-06
Language
English
Article Type
Article
Keywords

VAPOR-DEPOSITION; PLASMA; FILMS; DILUTION; LAYER

Citation

APPLIED PHYSICS LETTERS, v.84, pp.5416 - 5418

ISSN
0003-6951
DOI
10.1063/1.1767601
URI
http://hdl.handle.net/10203/755
Appears in Collection
EE-Journal Papers(저널논문)
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