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Results 1-7 of 7 (Search time: 0.007 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G(max)-Core

Yun, Byeonghun; Park, Dae-Woong; Mahmood, Hafiz Usman; Kim, Doyoon; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.69, no.5, pp.2519 - 2530, 2021-05

2
A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched G(max)-Core

Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE ACCESS, v.9, pp.99039 - 99049, 2021-10

3
Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G(max) Gain Boosting Technique

Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Hong, Jong-Phil; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.11, pp.3388 - 3398, 2021-11

4
Analysis and Design of Power-Efficient H-Band CMOS Frequency Doubler Employing Gain Boosting and Harmonic Enhancing Techniques

Moon, Byeong-Taek; Yun, Byeonghun; Kim, Jusung; Lee, Sang-Gug, IEEE ACCESS, v.11, pp.34942 - 34951, 2023

5
H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G(max)-Core and Transmission Line-Based Zero-Degree Power Networks

Yun, Byeonghun; Park, Dae-Woong; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.11, pp.3089 - 3102, 2023-11

6
A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core

Yun, Byeonghun; Park, Dae-Woong; Choi, Won-Jong; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.3, pp.292 - 295, 2021-03

7
A D-Band Wideband Low-Noise Amplifier Adopting Pseudo-Simultaneous Noise and Input Matched Dual-Peak G<sub>max</sub>-Core

Lee, Hokeun; Yun, Byeonghun; Jeon, Hyoryeong; Keum, Wooyong; Lee, Sang-Gug; Choi, Kyung-Sik, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.72, no.5, 2024-05

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