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Results 1-8 of 8 (Search time: 0.007 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Low-Frequency Noise Characteristics Under the OFF-State Stress

Lee, Geon-Beom; Kim, Choong-Ki; Yoo, Min-Soo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.10, pp.4366 - 4371, 2020-10

2
Triboelectric nanogenerator for a repairable transistor with self-powered electro-thermal annealing

Kim, Weon-Guk; Han, Joon-Kyu; Tcho, Il-Woong; Park, Jun-Young; Yu, Ji-Man; Choi, Yang-Kyu, NANO ENERGY, v.76, pp.105000, 2020-10

3
Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability

Lee, Geon-Beom; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, MICROELECTRONICS AND RELIABILITY, v.127, pp.114383, 2021-12

4
A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET

Kim, Myung-Su; Yun, Gyeong-Jun; Kim, Wu-Kang; Seo, Myungsoo; Kim, Da-Jin; Yu, Ji-Man; Han, Joon-Kyu; Hur, Jae; Lee, Geon-Beom; Kim, Seong-Yeon; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.43, no.4, pp.521 - 524, 2022-04

5
A Junctionless Single Transistor Neuron with Vertically Stacked Multiple Nanowires for Highly Scalable Neuromorphic Hardware

Han, Joon-Kyu; Yu, Ji-Man; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3142 - 3146, 2022-06

6
CMOS Ternary Logic with a Biristor Threshold Switch for Low Static Power Consumption

Han, Joon-Kyu; Yu, Ji-Man; Nam, Seo-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1005 - 1008, 2022-07

7
Lowering of Schottky Barrier Height in a MOSFET by Deuterium Annealing

Yu, Jiman; Wang, Dong-Hyun; Han, Joon-Kyu; Yun, Seong-Yun; Park, Jun-Young; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.7, pp.1032 - 1035, 2023-07

8
Physically Unclonable Function With a Rough Silicon Channel MOSFET

Jung, Dae-Han; Yu, Ji-Man; Ku, Ja-Yun; Yoon, Sung-Su; Kim, Jae-Hun; Han, Joon-Kyu; Kil, Tae-Hyun; Wang, Dong-Hyun; Yeon, Ju-Won; Choi, Yang-Kyu; Park, Junyong, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.425 - 430, 2024-01

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