Low-Frequency Noise Characteristics Under the OFF-State Stress

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Low-frequency noise (LFN) characteristics under OFF-state stress (OSS), which degrade device performance, were investigated in n-channel MOSFETs. The power spectral density (PSD) was analyzed by investigating the LFN and the border traps located in the gate oxide were extracted along a depth direction perpendicular to the silicon (Si) channel surface. The holes generated by band-to-band tunneling (BTBT) in the overlap region between a drain and a gate were found to be more detrimental to device performance than channel hot-carriers created by impact ionization.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-10
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.10, pp.4366 - 4371

ISSN
0018-9383
DOI
10.1109/TED.2020.3015445
URI
http://hdl.handle.net/10203/281866
Appears in Collection
EE-Journal Papers(저널논문)
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