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Showing results 1 to 4 of 4

1
An Improved 100 GHz Equivalent Circuit Model of a Through Silicon Via With Substrate Current Loop

Kim, Kibeom; Hwang, Karam; Ahn, Seungyoung, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.26, no.6, pp.425 - 427, 2016-06

2
Detection of the Interface-Trap Charge Density and Lateral Nonuniformity of Through-Silicon Vias

Kim, Kibeom; Ahn, Jangyong; Ahn, Seungyoung, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.5, pp.422 - 424, 2018-05

3
Signal Integrity Analysis of Through-Silicon Via (TSV) With a Silicon Dioxide Well to Reduce Leakage Current for High-Bandwidth Memory Interface

Kim, Hyunwoong; Lee, Seonghi; Park, Jongcheol; Shin, Yujun; Woo, Seongho; Kim, Jongwook; Cho, Jaeyong; et al, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.13, no.5, pp.700 - 714, 2023-05

4
Signal Integrity Analysis of Through-Silicon-Via (TSV) with Passive Equalizer to Separate Return Path and Mitigate the Inter-Symbol Interference (ISI) for Next Generation High Bandwidth Memory

Kim, HyunWoong; Park, Jongcheol; Lee, Sanguk; Kim, Jongwook; Ahn, Seungyoung, IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.13, no.12, pp.1973 - 1988, 2023-12

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