An Improved 100 GHz Equivalent Circuit Model of a Through Silicon Via With Substrate Current Loop

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This letter presents a new wideband equivalent circuit model for through silicon via (TSV) with consideration of the effective substrate current loop in silicon substrate and proximity effect on the currents in the TSV. The proposed model can accurately predict the electrical performance of the TSV at wide frequency range. The proposed model correlates well up to 100 GHz when compared to the full-wave electromagnetic simulation
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-06
Language
English
Article Type
Article
Keywords

THROUGH-SILICON; TSV; INTERCONNECTS; VIAS

Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.26, no.6, pp.425 - 427

ISSN
1531-1309
DOI
10.1109/LMWC.2016.2562113
URI
http://hdl.handle.net/10203/212882
Appears in Collection
GT-Journal Papers(저널논문)
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