Bistline, John; Onda, Chikara; Browning, Morgan; Emmerling, Johannes; Iyer, Gokul; Mahajan, Megan; McFarland, Jim; McJeon, Haewon; Orvis, Robbie; Fonseca, Francisco Ralston; Roney, Christopher; Sandoval, Noah; Sarmiento, Luis; Weyant, John; Woollacott, Jared; Yuan, Mei, ENERGY AND CLIMATE CHANGE, v.5, 2024-12
Park, sangjin; Yang, Jae-Suk, Engineering Applications of Artificial Intelligence, v.135, 2024-09
Wu, Longfeng; Kim, Seung Kyum, Climate Risk Management, v.45, 2024-07
Zhou, Yichun; Guan, ChengHe; Wu, Longfeng; Li, Ying; Nie, Xuanyi; Song, Jihoon; Kim, Seung Kyum; Akiyama, Yuki, Applied Geography, v.167, pp.103300, 2024-06
Lee, Changgi; Woo, Hyungsoo; Yang, Jae-Suk, INTERNATIONAL JOURNAL OF MODERN PHYSICS C, v.35, no.6, 2024-06
Choi, Minyoung; Yang, Jae-Suk, The Journal of Artificial Societies and Social Simulation, v.27, no.3, 2024-06
Li, Zhiwen; Xu, Liangliang; Babar, Zaheer Ud Din; Raza, Ali; Zhang, Yifei; Gu, Xinrui; Miao, Yu-Xin; Zhao, Zhen; Li, Gao, NANO RESEARCH, v.17, no.6, pp.4729 - 4736, 2024-06
Choi, Kyeong Rok; AHN, DAHEE; Jung, Seok Yeong; Lee, Yu Hyun; Lee, Sang Yup, NPJ SCIENCE OF FOOD, v.8, no.1, 2024-06
Kim, Ji Soo; Kim, Seung Kyum, NATURE CLIMATE CHANGE, v.14, no.5, 2024-05
Lee, Youngkyu; Park, Jongho; Lee, Chang-Ock, IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS, v.35, no.5, pp.6353 - 6364, 2024-05
Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys Nishi, Koichi; Yokoyama, Masafumi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.115, no.3, 2014-01 |
Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors Yokoyama, Masafumi; Nishi, Koichi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.104, no.9, 2014-03 |
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03 |
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi, THIN SOLID FILMS, v.557, pp.298 - 301, 2014-04 |
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360, 2014-05 |
Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.104, no.26, 2014-06 |
Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors Kim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.105, no.4, 2014-07 |
In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide Kim, Sang Hyeon; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.451 - 453, 2015-05 |
III-V/Ge channel MOS device technologies in nano CMOS era Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru, JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, 2015-06 |
Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment Kim, HoSung; Park, MinSu; Kim, SangHyeon; Kim, SangHyuck; Song, JinDong; Choi, WonJun; Park, JungHo; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4, 2015-07 |
High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions Noguchi, Munetaka; Kim, SangHyeon; Yokoyama, Masafumi; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.118, no.4, 2015-07 |
Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate Kim, SangHyeon; Park, Min-Su; Geum, Dae-Myeong; Kim, Hosung; Ryu, GuenHwan; Yang, Hyun-Duk; Song, Jin Dong; et al, CURRENT APPLIED PHYSICS, v.15, pp.S40 - S43, 2015-09 |
InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off Park, Min-Su; Geum, Dae-Myeong; Kyhm, Ji Hoon; Song, Jin Dong; Kim, SangHyeon; Choi, Won Jun, OPTICS EXPRESS, v.23, no.21, pp.26888 - 26894, 2015-10 |
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding Kim, SangHyeon; Geum, Dae-Myeong; Park, Min-Su; Kim, Chang Zoo; Choi, Won Jun, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.141, pp.372 - 376, 2015-10 |
Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; et al, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.4, pp.2906 - 2912, 2016-01 |
Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; et al, SCIENTIFIC REPORTS, v.6, 2016-02 |
Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots Kim, Ho Sung; Park, Min Su; Kim, Sang Hyeon; Park, Suk In; Song, Jin Dong; Kim, Sang Hyuck; Choi, Won Jun; et al, THIN SOLID FILMS, v.604, pp.81 - 84, 2016-04 |
Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; et al, SOLID-STATE ELECTRONICS, v.122, pp.8 - 12, 2016-08 |
InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror Yun, Ye Seul; Kim, SangHyeon; Ryu, Han-Youl; Park, Min-Su; Jang, Hojin; Song, Jong Han; Lim, Weon Cheol; et al, CURRENT APPLIED PHYSICS, v.16, no.9, pp.1005 - 1008, 2016-09 |
Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1261 - 1263, 2016-10 |
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