Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment
The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively. (C) 2015 American Vacuum Society.
- Publisher
- A V S AMER INST PHYSICS
- Issue Date
- 2015-07
- Language
- English
- Article Type
- Article
- Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4
- ISSN
- 1071-1023
- Appears in Collection
- RIMS Journal Papers
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- There are no files associated with this item.
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