Browse "School of Electrical Engineering(전기및전자공학부)" by Title
Showing results 18801 to 18820 of 51408
| Formation mechanism of self-organized nano-ripples on quartz surface using femtosecond laser pulses Ahsan, Md Shamim; Lee, Man-Seop; Hasan, Mohammad Khairul; Noh, Young-Chul; Sohn, Ik-Bu; Ahmed, Farid; Jun, Martin BG, OPTIK, v.126, no.24, pp.5979 - 5983, 2015-12 |
| Formation mechanism of self-organized nanogratings on a titanium surface using femtosecond laser pulses Ahsan, Md Shamim; Lee, Man-Seop, OPTICAL ENGINEERING, v.51, no.12, 2012-12 |
| Formation of a Top Electrode on Vertical Si Nanowire Devices Using Graphene as a Supporting Layer Jeong, Hyeon Ho; Kim, Jungkil; Lee, Jinsup; Jeon, Seokwoo; Lee, Woo; Lee, Seok-Hee, APPLIED PHYSICS EXPRESS, v.5, no.10, 2012-10 |
| Formation of Cooperative Cluster for Coordinated Transmission in Multi-Cell Wireless Networks Moon, Jung-Min; Cho, Dong-Ho, IEEE CCNC 2013, pp.528 - 533, IEEE, 2013-01 |
| Formation of defects in HgCdTe photodiodes induced by thermal stress Lee, Hee Chul, 2002 U.S. Workshop for Physics and Chemistry of II–VI Materials, pp.0 - 0, U.S. Workshop for Physics and Chemistry of II–VI Materials, 2002-11 |
| Formation of Favorable Inermetallic Compound to Improve Contact Resistance in Screen-Printed Thermoelectric Thick Films Kim, Yongjun; Kim, Sun Jin; Choi, Hyeongdo; Kim, Choong Sun; Lee, Gyusoup; Shin, Ji Seon; Yi, Kyung Soo; et al, International Conference on Thermoelectrics 2017 (ICT2017), International Thermoelectric Society, 2017-07-31 |
| FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS ASANO, T; ISHIWARA, H; Lee, Hee Chul; TSUTSUI, K; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141, 1986-02 |
| Formation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators Lee, Hee Chul; Asano, T; Ishiwara, H; Tsutsui, K; Furukawa, S, Extended Abstracts 17th Conf. on Solid State Devices and Materials, pp.217 - 220, 1985 |
| Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
| FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT Yoon, Giwan; LO, GQ; KIM, J; HAN, LK; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.266 - 268, 1994-08 |
| FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING HAN, LK; Yoon, Giwan; KIM, J; YAN, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.16, no.8, pp.348 - 350, 1995-08 |
| Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06 |
| Formation of macroscopic steps during selective area metalorganic chemical vapor deposition on GaAs (001) vicinal substrates hyunchol shin; Kwon, Young Se, JOURNAL OF CRYSTAL GROWTH, v.177, no.2016-01-02, pp.33 - 40, 1997 |
| Formation of micro/nano-metric holes/voids in Al2O3-coated boro-aluminosilicate glass by single pulse femtosecond laser irradiation Ahsan, Md. Shamim; Lee, Man-Seop; Rafi, Ragib Shakil, 8th International Conference on Electrical and Computer Engineering, ICECE 2014, pp.489 - 492, Institute of Electrical and Electronics Engineers Inc., 2014-12 |
| FORMATION OF MISFIT DISLOCATIONS DURING ZN-DIFFUSION-INDUCED INTERMIXING OF A GAINASP/INP HETEROSTRUCTURE Park, HyoHoon; NAM, ES; LEE, YT; LEE, EH; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.59, no.16, pp.2025 - 2027, 1991-10 |
Formation of Periodic Micro/nano-holes Array in Boro-aluminosilicate Glass by Single-pulse Femtosecond Laser Machining Ahsan, Md Shamim; Kwon, Yoon-Young; Sohn, Ik-Bu; Noh, Young-Chul; Lee, Man Seop, JOURNAL OF LASER MICRO NANOENGINEERING, v.9, no.1, 2014-03 |
| Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET Cho, Byung Jin; Poon, D; Tan, LS; Du, AY; Chan, L, 3rd International Conference on Materials for Advanced Technologies, pp.5 - 5, 2005-07-03 |
| Formation of shallow phosphorus layers by rapid thermal processing using a solid diffusion source k. t. kim; c. k. kim; b. j. cho; k. g. kim, JOURNAL OF THE KOREA INSTITUTE OF ELECTRONIC ENGINEERS, v.1, no.2, pp.105 - 109, 1988-09 |
| Formation of SOI-GaAs on (Ca,Sr)F2/GaAs Structures Lee, Hee Chul; Tsutsui, K; Ishiwara, H; Asano, T; Furukawa, S, Inst. Phys. Conf. Ser, pp.109 - 114, 1985 |
| Formation of stacking faults and misfit dislocations during Zn diffusion-enhanced intermixing of a GaInAsP/InP heterostructure Park, HyoHoon; Nam, ES; Lee, YT; Lee, EH; Lee, JeongYong; Kwon, OD, MRS Symposium 1990, pp.591 - 591, 1990-12-01 |
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