Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Abstract

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 mu Omega.cm) at 15 nm was obtained by N-2 + H-2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (rho(c)) values of 9.01 mu Omega.cm(2) for an NiGe/n(+)Ge contact and 3.61 mu Omega.cm(2) for an NiGe/p(+) Ge contact. These values were comparable to those obtained using sputteredNi. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 degrees C.