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Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Kang S.-W.

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Showing results 1 to 8 of 8

1
A 3-dimensional model for step coverage by atomic layer deposition in a patterned structure

Kim J.-Y.; Kim J.-H.; Ahn J.-H.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.917 -, 2005-10-16

2
Dielectric properties of SrTiO3 thin films on SrRuO3 seed prepared by plasma-enhanced atomic layer deposition

Ahn J.-H.; Kim J.-Y.; Kim J.-H.; Roh J.-S.; Kang S.-W., Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, pp.335 - 339, 123, 2008-10-13

3
Effects of film thickness and preferred orientation on the dielectric constants of HF-aluminate films deposited by PEALD

Moon H.-S.; Joo D.; Park P.-K.; Kang S.-W., Atomic Layer Deposition Applications 4 - 214th ECS Meeting, pp.343 - 348, 2008-10-13

4
Measurement of thermal expansion coefficient of poly-si using microgauge sensors

Chae J.-H.; Lee J.-Y.; Kang S.-W., Smart Electronics and MEMS, v.3242, pp.202 - 211, 1997-12-11

5
Precise thickness and composition control of multi-component thin films in ALP

Chung H.-S.; Kang S.-W., 6th International Conference on Semiconductor Technology, ISTC2007, pp.71 - 80, 2007-03-18

6
Two step annealing of iridium thin films prepared by plasma-enhanced atomic layer deposition

Kim S.-W.; Kwon S.-H.; Kang S.-W., Atomic Layer Deposition Applications 4 - 214th ECS Meeting, pp.309 - 314, 2008-10-13

7
Two-step atomic layer deposition for tantalum nitride by nitridation of tantalum with ammonia

Kwon J.-D.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.919 -, 2005-10-16

8
Ultra thin copper film deposition by metal-organic chemical vapor deposition on ruthenium thin film

Kwak D.-K.; Lee H.-B.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.1179 -, 2005-10-16

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