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Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject indium compounds

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Showing results 1 to 8 of 8

1
Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor

Jeon, Jun-Hyuck; Hwang, Young-Hwan; Bae, Byeong-Soo; Kwon, H. L.; Kang, H. J., APPLIED PHYSICS LETTERS, v.96, no.21, pp.212109 - 212109, 2010-05

2
Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin, Byungha; Clemens, Jonathon B.; Kelly, Michael A.; Kummel, Andrew C.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.25, 2010-06

3
High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.7, 2009-08

4
High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers

Kim, Dong-Hun; Choi, Seung-Hoon; Cho, Nam-Gyu; Chang, Young-Eun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.296 - 298, 2009

5
Highly Transparent InGaZnO4 Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate

Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.198 - 201, 2009

6
Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer

Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.96, no.21, 2010-05

7
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04

8
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

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